Presentation 2004/5/7
Deposition of ZnS thin films by the photochemical deposition method and their characterization
Tetsuya MIYAWAKI, Ryohei KOBAYASHI, Masaya ICHIMURA,
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Abstract(in English) ZnS films were deposited on ITO substrates in aqueous solutions containing S_2O_2^<2-> ions and Zn^<2+> ions only by photochemical reaction. To prevent deposition of excess Zn, the following two methods were examined. (1) Light illumination was performed intermittently, in a form of pulse. (2) Zn^<2+> ion and S_2O_2^<2-> ion concentrations were optimized in continuous illumination. The deposited films were characterized by a surface profilometer, an optical spectrometer, Auger electron spectroscopy and photoelectrochemical measurement. Deposited ZnS films have an n-type semiconducting property. In the case of pulse-light illumination, deposited films contained small amount of ZnO.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) photochemical deposition / pulse-light illumination / photoelectrochemical measurement / ZnS / aqueous solution
Paper # ED2004-27,CPM2004-22,SDM2004-27
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Committee CPM
Conference Date 2004/5/7(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Deposition of ZnS thin films by the photochemical deposition method and their characterization
Sub Title (in English)
Keyword(1) photochemical deposition
Keyword(2) pulse-light illumination
Keyword(3) photoelectrochemical measurement
Keyword(4) ZnS
Keyword(5) aqueous solution
1st Author's Name Tetsuya MIYAWAKI
1st Author's Affiliation Nagoya Institute of Technology()
2nd Author's Name Ryohei KOBAYASHI
2nd Author's Affiliation Nagoya Institute of Technology
3rd Author's Name Masaya ICHIMURA
3rd Author's Affiliation Nagoya Institute of Technology
Date 2004/5/7
Paper # ED2004-27,CPM2004-22,SDM2004-27
Volume (vol) vol.104
Number (no) 42
Page pp.pp.-
#Pages 5
Date of Issue