Presentation 2004/5/7
Influence of substrate conditions on ZnO quantum dots
Satoshi NAKAGAWA, Atsushi NAKAMURA, Toru AOKI, Jiro TEMMYO,
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Abstract(in English) ZnO quantum dots have been investigated for high efficiency ultraviolet emitting devices. The ZnO quantum dots were grown on SiO_2 substrate using Remote Plasma Enhanced Metal Organic Chemical Vapor Depositon (RPE-MOCVD). Diethyl Zinc(DEZn) was used for a II group source and oxygen gas was used for a VI group source. The dots size and density were investigated by changing the growth rate and plasma treatment of substrate surface. Optical property of ZnO quantum dots was characterized by photoluminescence measurement, compared with that of ZnO film. Plasma treatment of the substrate surface has an influence on the initial formation of ZnO quantum dots.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ZnO / quantum dots / remote plasma MOCVD / plasma processing / VW mode
Paper # ED2004-25,CPM2004-20,SDM2004-25
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Committee CPM
Conference Date 2004/5/7(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Influence of substrate conditions on ZnO quantum dots
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) quantum dots
Keyword(3) remote plasma MOCVD
Keyword(4) plasma processing
Keyword(5) VW mode
1st Author's Name Satoshi NAKAGAWA
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Atsushi NAKAMURA
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Toru AOKI
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Jiro TEMMYO
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2004/5/7
Paper # ED2004-25,CPM2004-20,SDM2004-25
Volume (vol) vol.104
Number (no) 42
Page pp.pp.-
#Pages 6
Date of Issue