Presentation 2004/5/7
CdSe quantum dots formation using remote plasma MOCVD
Takashi KOYAMA, Toru AOKI, Jiro TEMMYO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) CdSe/ZnSe and CdSe/GaAs quantum dots were grown by using remote plasma MOCVD. The thickness of CdSe layers was controlled by deposition time and growth rate. The Dots density was depended on the CdSe layer thickness. At critical thickness of CdSe layer, high density CdSe dots were formed. The CdSe dots shape was depends on the growth substrates. An annealing process had a role of the adjusting the dots size.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CdSe / ZnSe / Self-assembled Quantum Dot / remote plasma MOCVD
Paper # ED2004-24,CPM2004-19,SDM2004-24
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Conference Information
Committee CPM
Conference Date 2004/5/7(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) CdSe quantum dots formation using remote plasma MOCVD
Sub Title (in English)
Keyword(1) CdSe
Keyword(2) ZnSe
Keyword(3) Self-assembled Quantum Dot
Keyword(4) remote plasma MOCVD
1st Author's Name Takashi KOYAMA
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Toru AOKI
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Jiro TEMMYO
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2004/5/7
Paper # ED2004-24,CPM2004-19,SDM2004-24
Volume (vol) vol.104
Number (no) 42
Page pp.pp.-
#Pages 6
Date of Issue