| Presentation | 2004/5/7 Effect of Dot Formation in Si/SiO_2 Resonant Tunneling Structure Yasuhiko ISHIKAWA, Kohei OSADA, Hiroya IKEDA, Michiharu TABE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effect of lateral size of Si potential well on electron tunneling through Si/SiO_2 double-barrier structure was studied. In the ordinary layered structure, a negative differential conductance due to the resonant tunneling was observed. In contrast, the diodes containing Si dots as the potential well showed staircases in the I-V curve. The staircase is ascribed to the single electron tunneling (Coulomb staircase) due to the reduction of capacitance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si/SiO_2 / Double-barrier structure / Si dot / Resonant tunneling / Single electron tunneling |
| Paper # | ED2004-23,CPM2004-18,SDM2004-23 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/5/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Dot Formation in Si/SiO_2 Resonant Tunneling Structure |
| Sub Title (in English) | |
| Keyword(1) | Si/SiO_2 |
| Keyword(2) | Double-barrier structure |
| Keyword(3) | Si dot |
| Keyword(4) | Resonant tunneling |
| Keyword(5) | Single electron tunneling |
| 1st Author's Name | Yasuhiko ISHIKAWA |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Kohei OSADA |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Hiroya IKEDA |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Michiharu TABE |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2004/5/7 |
| Paper # | ED2004-23,CPM2004-18,SDM2004-23 |
| Volume (vol) | vol.104 |
| Number (no) | 42 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |