| Presentation | 2004/5/6 Conductivity control ofAlGaN using monomethylsilane Shinya Itoh, Hiroki Tsuma, Akihiro Wakahara, Hiroshi Okada, Akira Yoshida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Si doping for AlGaN was investigated using monomethylsilane : ((CH_3)SiH_3) as a source gas, and the Si-doping properties and the controllability of conductivity in Al_xGa_<1_x>N(x ≤ 0.6) were investigated. Si-doped Al_xGa_<1_x>N (x ≤ 0.6 ) layers were grown on AlN/ α-Al_2O_3 substrates by metalorganic vapor phase epitaxy at low-pressure (76 Torr). Al compositions were 0.24, 0.40 and 0.60. Full width at half maximum value of x-ray rocking curve from (0004) diffraction for AlGaN layers were 150～400 arcsec. The electron concentration at 300 K for Si-doped Al_xGa_<1-x>N with X = 0.24, 0.40 and 0.60 was proportional to the (CH_3)SiH_3 flow rate. The ionization energy increased slightly from 14 to 2 1 meV as increasing the Al composition from 0.24 to 0.60. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Monomethylsilane / Controllability of conductivity / Ionization energy / AlGaN / MOVPE |
| Paper # | ED2004-19,CPM2004-14,SDM2004-19 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/5/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Conductivity control ofAlGaN using monomethylsilane |
| Sub Title (in English) | |
| Keyword(1) | Monomethylsilane |
| Keyword(2) | Controllability of conductivity |
| Keyword(3) | Ionization energy |
| Keyword(4) | AlGaN |
| Keyword(5) | MOVPE |
| 1st Author's Name | Shinya Itoh |
| 1st Author's Affiliation | Toyohashi University of Techology() |
| 2nd Author's Name | Hiroki Tsuma |
| 2nd Author's Affiliation | Toyohashi University of Techology |
| 3rd Author's Name | Akihiro Wakahara |
| 3rd Author's Affiliation | Toyohashi University of Techology |
| 4th Author's Name | Hiroshi Okada |
| 4th Author's Affiliation | Toyohashi University of Techology |
| 5th Author's Name | Akira Yoshida |
| 5th Author's Affiliation | Toyohashi University of Techology |
| Date | 2004/5/6 |
| Paper # | ED2004-19,CPM2004-14,SDM2004-19 |
| Volume (vol) | vol.104 |
| Number (no) | 41 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |