Presentation 2004/5/6
Growth of GaN/AlN pyramid structure on Si substrate by MOVPE
Yoshio HONDA, Tsuyoshi NAKAMURA, Masahito YAMAGUCHI, Nobuhiko SAWAKI,
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Abstract(in English) We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.
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Keyword(in English) GaN / selectiveareagrowth / (111)Si / MOVPE / fieldemitter
Paper # ED2004-18,CPM2004-13,SDM2004-18
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Committee CPM
Conference Date 2004/5/6(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of GaN/AlN pyramid structure on Si substrate by MOVPE
Sub Title (in English)
Keyword(1) GaN
Keyword(2) selectiveareagrowth
Keyword(3) (111)Si
Keyword(4) MOVPE
Keyword(5) fieldemitter
1st Author's Name Yoshio HONDA
1st Author's Affiliation Department of electronics engineering, Nagoya University()
2nd Author's Name Tsuyoshi NAKAMURA
2nd Author's Affiliation Department of electronics engineering, Nagoya University
3rd Author's Name Masahito YAMAGUCHI
3rd Author's Affiliation Department of electronics engineering, Nagoya University
4th Author's Name Nobuhiko SAWAKI
4th Author's Affiliation Department of electronics engineering, Nagoya University
Date 2004/5/6
Paper # ED2004-18,CPM2004-13,SDM2004-18
Volume (vol) vol.104
Number (no) 41
Page pp.pp.-
#Pages 6
Date of Issue