Presentation 2004/9/3
Phase change write-once media for 50GB/side disc
Kazuyoshi Adachi, Hiroshi Shirai, Reiji Tamura, Akemi Hirotsune, Hiroyuki Minemura,
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Abstract(in English) We developed phase change write-once disc for data storage system. Write-once function is realized by metal oxide layer which is fabricated onto the recording layer. The metal oxide layer decomposes by heat of write process, and the recording layer is oxidized. Consequently, the crystallization speed of a recording layer becomes lower and an optical constant of a recording layer changes. This write-once meida is applied for 50GB/side write/read condition. We get a good bit error rate which can realize 50GB/side.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) write-once / Phase change / metal-oxide / 50GB
Paper # CPM2004-87
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Committee CPM
Conference Date 2004/9/3(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Phase change write-once media for 50GB/side disc
Sub Title (in English)
Keyword(1) write-once
Keyword(2) Phase change
Keyword(3) metal-oxide
Keyword(4) 50GB
1st Author's Name Kazuyoshi Adachi
1st Author's Affiliation Development & Technology Division, Hitachi Maxell, Ltd.()
2nd Author's Name Hiroshi Shirai
2nd Author's Affiliation Development & Technology Division, Hitachi Maxell, Ltd.
3rd Author's Name Reiji Tamura
3rd Author's Affiliation Development & Technology Division, Hitachi Maxell, Ltd.
4th Author's Name Akemi Hirotsune
4th Author's Affiliation Research & Development Group, Hitachi, Ltd.
5th Author's Name Hiroyuki Minemura
5th Author's Affiliation Research & Development Group, Hitachi, Ltd.
Date 2004/9/3
Paper # CPM2004-87
Volume (vol) vol.104
Number (no) 287
Page pp.pp.-
#Pages 4
Date of Issue