| Presentation | 2004/9/3 High-Power Blue-Violet Laser Diode Fabricated on a GaN Substrate Takashi KANO, Yasuyuki BESSHO, Yasuhiko NOMURA, Masayuki SHONO, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated blue-violet laser diodes, consisting of nitride-based semiconductors, with both high-power and low-noise characteristics on GaN substrates. By improving the crystal quality of the grown materials and optimizing the optical confinement in the device, a kink level as high as 250 mW has been achieved. These laser diodes have been operating reliably for more than 1OOOh with a light output power of 100 mW at 60℃ under pulsed operation. We have also confirmed that these laser diodes have a noise level as low as -130dB/Hz, which meets the requirement for practical use, for a light output power of 5mW. These laser diodes are expected to enable dual layer recording in next -generation, large-capacity optical disc systems using blue-violet laser diodes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | laser diode / GaN-based semiconductor / high power / low noise / kink level / far field pattern |
| Paper # | CPM2004-83 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2004/9/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Power Blue-Violet Laser Diode Fabricated on a GaN Substrate |
| Sub Title (in English) | |
| Keyword(1) | laser diode |
| Keyword(2) | GaN-based semiconductor |
| Keyword(3) | high power |
| Keyword(4) | low noise |
| Keyword(5) | kink level |
| Keyword(6) | far field pattern |
| 1st Author's Name | Takashi KANO |
| 1st Author's Affiliation | Materials and Devices Development Center BU, SANYO Electric Co., Ltd.() |
| 2nd Author's Name | Yasuyuki BESSHO |
| 2nd Author's Affiliation | Materials and Devices Development Center BU, SANYO Electric Co., Ltd. |
| 3rd Author's Name | Yasuhiko NOMURA |
| 3rd Author's Affiliation | Materials and Devices Development Center BU, SANYO Electric Co., Ltd. |
| 4th Author's Name | Masayuki SHONO |
| 4th Author's Affiliation | Materials and Devices Development Center BU, SANYO Electric Co., Ltd. |
| Date | 2004/9/3 |
| Paper # | CPM2004-83 |
| Volume (vol) | vol.104 |
| Number (no) | 287 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |