Presentation 2004/1/29
Pilot-Photon-Emission and Pilot-OBIRCH Analysis Methods for LSI Fault Isolation
Tatsuya ISHI, Hirotoshi TERADA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The present conditions of two analysis methods (Pilot-photo-emission and Pilot-OBIRCH) were shown. The Pilot-photo-emission is possible to localize the defect position on the LSI chip with the positional resolution that exceeds the diffraction limit of optics. It was shown from the experiment that la of the observed position was 65nm under the positional resolution: 0.13 urn, accordingly this method provided the high observation accuracy. And the application to the actual failure of memory macro cells such as the embedded SRAM on ASIC devices was announced. The Pilot-OBIRCH is in the stage that the basic experiments are just started. The application to the failure analysis of the CMOS-LSI overall is being aimed in the both of methods.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Emission Microscopy / OBIRCH / Failure Analysis / LSI
Paper # CPM2003-163,ICD2003-202
Date of Issue

Conference Information
Committee CPM
Conference Date 2004/1/29(1days)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Pilot-Photon-Emission and Pilot-OBIRCH Analysis Methods for LSI Fault Isolation
Sub Title (in English)
Keyword(1) Emission Microscopy
Keyword(2) OBIRCH
Keyword(3) Failure Analysis
Keyword(4) LSI
1st Author's Name Tatsuya ISHI
1st Author's Affiliation Seiko Epson Corp.()
2nd Author's Name Hirotoshi TERADA
2nd Author's Affiliation Hamamatsu Photonics K.K.
Date 2004/1/29
Paper # CPM2003-163,ICD2003-202
Volume (vol) vol.103
Number (no) 645
Page pp.pp.-
#Pages 6
Date of Issue