| Presentation | 2003/5/8 AlGaN/GaN heterostructure MIS-HEMTs with Si_3N_4 gate insulator Masaru Ochiai, Yutaka Ohno, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Si_3N_4 film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the Si_3N_4 gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN HEMT / MIS-HEMTs / Si_3N_4 gate insulator / gate leakage current / low-frequency noise / current collapse |
| Paper # | ED2003-23,CPM2003-22,SDM2003-23 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2003/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN heterostructure MIS-HEMTs with Si_3N_4 gate insulator |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN HEMT |
| Keyword(3) | MIS-HEMTs |
| Keyword(4) | Si_3N_4 gate insulator |
| Keyword(5) | gate leakage current |
| Keyword(6) | low-frequency noise |
| Keyword(7) | current collapse |
| 1st Author's Name | Masaru Ochiai |
| 1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
| 2nd Author's Name | Yutaka Ohno |
| 2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 3rd Author's Name | Shigeru Kishimoto |
| 3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 4th Author's Name | Koichi Maezawa |
| 4th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 5th Author's Name | Takashi Mizutani |
| 5th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| Date | 2003/5/8 |
| Paper # | ED2003-23,CPM2003-22,SDM2003-23 |
| Volume (vol) | vol.103 |
| Number (no) | 48 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |