Presentation | 2003/5/8 Microstructure and optical properties of thick GaN grown by flux method as a substrate for MOVPE growth of GaN Masataka Imura, Tomoaki Sano, Shuugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tomoya Iwahashi, Masaki Morisita, Sirou Kawamura, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Thick GaN crystal was grown by the liquid phase epitaxy (LPE) using Na flux. TEM observation showed that threading dislocation density is as low as 10^5cm^<-2> or even less. PL intensity is higher than that of MOVPE grown GaN more than 50 times. We also successfully grew thick GaN by MOVPE using LPE-GaN as the substrate. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / LPE / Na flux / single crystal / MOVPE / dislocation / μ-PL |
Paper # | ED2003-22,CPM2003-21,SDM2003-22 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2003/5/8(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Vice Chair | |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Microstructure and optical properties of thick GaN grown by flux method as a substrate for MOVPE growth of GaN |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | LPE |
Keyword(3) | Na flux |
Keyword(4) | single crystal |
Keyword(5) | MOVPE |
Keyword(6) | dislocation |
Keyword(7) | μ-PL |
1st Author's Name | Masataka Imura |
1st Author's Affiliation | High-Tech Research Center, Faculty of Science, Meijo University() |
2nd Author's Name | Tomoaki Sano |
2nd Author's Affiliation | High-Tech Research Center, Faculty of Science, Meijo University |
3rd Author's Name | Shuugo Nitta |
3rd Author's Affiliation | High-Tech Research Center, Faculty of Science, Meijo University |
4th Author's Name | Motoaki Iwaya |
4th Author's Affiliation | High-Tech Research Center, Faculty of Science, Meijo University |
5th Author's Name | Satoshi Kamiyama |
5th Author's Affiliation | High-Tech Research Center, Faculty of Science, Meijo University |
6th Author's Name | Hiroshi Amano |
6th Author's Affiliation | High-Tech Research Center, Faculty of Science, Meijo University |
7th Author's Name | Isamu Akasaki |
7th Author's Affiliation | High-Tech Research Center, Faculty of Science, Meijo University |
8th Author's Name | Tomoya Iwahashi |
8th Author's Affiliation | Graduate School of Eng., Osaka University |
9th Author's Name | Masaki Morisita |
9th Author's Affiliation | Graduate School of Eng., Osaka University |
10th Author's Name | Sirou Kawamura |
10th Author's Affiliation | Graduate School of Eng., Osaka University |
11th Author's Name | Masashi Yoshimura |
11th Author's Affiliation | Graduate School of Eng., Osaka University |
12th Author's Name | Yusuke Mori |
12th Author's Affiliation | Graduate School of Eng., Osaka University |
13th Author's Name | Takatomo Sasaki |
13th Author's Affiliation | Graduate School of Eng., Osaka University |
Date | 2003/5/8 |
Paper # | ED2003-22,CPM2003-21,SDM2003-22 |
Volume (vol) | vol.103 |
Number (no) | 48 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |