Presentation 2003/5/8
Microstructure and optical properties of thick GaN grown by flux method as a substrate for MOVPE growth of GaN
Masataka Imura, Tomoaki Sano, Shuugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tomoya Iwahashi, Masaki Morisita, Sirou Kawamura, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki,
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Abstract(in English) Thick GaN crystal was grown by the liquid phase epitaxy (LPE) using Na flux. TEM observation showed that threading dislocation density is as low as 10^5cm^<-2> or even less. PL intensity is higher than that of MOVPE grown GaN more than 50 times. We also successfully grew thick GaN by MOVPE using LPE-GaN as the substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / LPE / Na flux / single crystal / MOVPE / dislocation / μ-PL
Paper # ED2003-22,CPM2003-21,SDM2003-22
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Committee CPM
Conference Date 2003/5/8(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Microstructure and optical properties of thick GaN grown by flux method as a substrate for MOVPE growth of GaN
Sub Title (in English)
Keyword(1) GaN
Keyword(2) LPE
Keyword(3) Na flux
Keyword(4) single crystal
Keyword(5) MOVPE
Keyword(6) dislocation
Keyword(7) μ-PL
1st Author's Name Masataka Imura
1st Author's Affiliation High-Tech Research Center, Faculty of Science, Meijo University()
2nd Author's Name Tomoaki Sano
2nd Author's Affiliation High-Tech Research Center, Faculty of Science, Meijo University
3rd Author's Name Shuugo Nitta
3rd Author's Affiliation High-Tech Research Center, Faculty of Science, Meijo University
4th Author's Name Motoaki Iwaya
4th Author's Affiliation High-Tech Research Center, Faculty of Science, Meijo University
5th Author's Name Satoshi Kamiyama
5th Author's Affiliation High-Tech Research Center, Faculty of Science, Meijo University
6th Author's Name Hiroshi Amano
6th Author's Affiliation High-Tech Research Center, Faculty of Science, Meijo University
7th Author's Name Isamu Akasaki
7th Author's Affiliation High-Tech Research Center, Faculty of Science, Meijo University
8th Author's Name Tomoya Iwahashi
8th Author's Affiliation Graduate School of Eng., Osaka University
9th Author's Name Masaki Morisita
9th Author's Affiliation Graduate School of Eng., Osaka University
10th Author's Name Sirou Kawamura
10th Author's Affiliation Graduate School of Eng., Osaka University
11th Author's Name Masashi Yoshimura
11th Author's Affiliation Graduate School of Eng., Osaka University
12th Author's Name Yusuke Mori
12th Author's Affiliation Graduate School of Eng., Osaka University
13th Author's Name Takatomo Sasaki
13th Author's Affiliation Graduate School of Eng., Osaka University
Date 2003/5/8
Paper # ED2003-22,CPM2003-21,SDM2003-22
Volume (vol) vol.103
Number (no) 48
Page pp.pp.-
#Pages 6
Date of Issue