| Presentation | 2003/11/3 Preparation of Bi_2Sr_2CuO_x films on SrTiO_3/SrO buffered Si(001) substrates by molecular beam epitaxy technique M. N. K. Bhuiyan, A. Matsuda, T. Yasumura, T. Tambo, C. Tatsuyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The evolution of oxidized Si(001) surface by Sr exposure and the subsequent growth of SrO, SrTiO_3(STO) and Bi_2Sr_2CuO_x (BSCO) films have been studied using reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD).The deposition was performed in a molecular beam epitaxy (MBE) chamber. The chemically formed SiO_2 layer on Si(001) substrates is removed at the substrate temperature of 800 ℃ under Sr exposure and a stable and well ordered (2×1) structure is clearly observed in the RHEED pattern. Epitaxial BSCO film does not grow directly on Si(001). Therefore, a double STO/SrO buffer layer is grown on the Si(001)-Sr(2×1) surface. XRD pattern indicates that the crystalline BSCO film grows on the STO/SrO/Si. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BSCO films / MBE / SiO_2 layer / Sr exposure / Si(001) substrate / RHEED / XPS / AFM / XRD |
| Paper # | CPM2003-139 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/11/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of Bi_2Sr_2CuO_x films on SrTiO_3/SrO buffered Si(001) substrates by molecular beam epitaxy technique |
| Sub Title (in English) | |
| Keyword(1) | BSCO films |
| Keyword(2) | MBE |
| Keyword(3) | SiO_2 layer |
| Keyword(4) | Sr exposure |
| Keyword(5) | Si(001) substrate |
| Keyword(6) | RHEED |
| Keyword(7) | XPS |
| Keyword(8) | AFM |
| Keyword(9) | XRD |
| 1st Author's Name | M. N. K. Bhuiyan |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University() |
| 2nd Author's Name | A. Matsuda |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University |
| 3rd Author's Name | T. Yasumura |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University |
| 4th Author's Name | T. Tambo |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University |
| 5th Author's Name | C. Tatsuyama |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University |
| Date | 2003/11/3 |
| Paper # | CPM2003-139 |
| Volume (vol) | vol.103 |
| Number (no) | 411 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |