Presentation 2003/11/3
Low temperature growth of cubic GaN on GaAs(100) using hot-mesh CVD
Yoshiaki Taima, Mitsuyoshi Ishibashi, Kanji Yasui, Tadashi Akahane,
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Abstract(in English) Growth conditions for cubic type GaN films on GaAs substrates were investigated using hot-mesh CVD. Epitaxial growth was tried on the substrate surface nitrided by NH3 gas decomposed by tungsten (W) mesh at the best condition obtained in a previous study. Compared with the growth by hot filament CVD, GaN film with more preponderant cubic phase was grown at W-mesh temperature 1400, NH3 gas pressure 67Pa and substrate temperature 650.
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Keyword(in English) Hot-mesh CVD / cubic GaN / GaAs / Low temperature growth
Paper # CPM2003-135
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Committee CPM
Conference Date 2003/11/3(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low temperature growth of cubic GaN on GaAs(100) using hot-mesh CVD
Sub Title (in English)
Keyword(1) Hot-mesh CVD
Keyword(2) cubic GaN
Keyword(3) GaAs
Keyword(4) Low temperature growth
1st Author's Name Yoshiaki Taima
1st Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology()
2nd Author's Name Mitsuyoshi Ishibashi
2nd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
3rd Author's Name Kanji Yasui
3rd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
4th Author's Name Tadashi Akahane
4th Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
Date 2003/11/3
Paper # CPM2003-135
Volume (vol) vol.103
Number (no) 411
Page pp.pp.-
#Pages 4
Date of Issue