Presentation | 2003/11/3 Low temperature growth of cubic GaN on GaAs(100) using hot-mesh CVD Yoshiaki Taima, Mitsuyoshi Ishibashi, Kanji Yasui, Tadashi Akahane, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Growth conditions for cubic type GaN films on GaAs substrates were investigated using hot-mesh CVD. Epitaxial growth was tried on the substrate surface nitrided by NH3 gas decomposed by tungsten (W) mesh at the best condition obtained in a previous study. Compared with the growth by hot filament CVD, GaN film with more preponderant cubic phase was grown at W-mesh temperature 1400, NH3 gas pressure 67Pa and substrate temperature 650. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Hot-mesh CVD / cubic GaN / GaAs / Low temperature growth |
Paper # | CPM2003-135 |
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Committee | CPM |
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Conference Date | 2003/11/3(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low temperature growth of cubic GaN on GaAs(100) using hot-mesh CVD |
Sub Title (in English) | |
Keyword(1) | Hot-mesh CVD |
Keyword(2) | cubic GaN |
Keyword(3) | GaAs |
Keyword(4) | Low temperature growth |
1st Author's Name | Yoshiaki Taima |
1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
2nd Author's Name | Mitsuyoshi Ishibashi |
2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
3rd Author's Name | Kanji Yasui |
3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
4th Author's Name | Tadashi Akahane |
4th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
Date | 2003/11/3 |
Paper # | CPM2003-135 |
Volume (vol) | vol.103 |
Number (no) | 411 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |