| Presentation | 2003/11/3 Reinterpretation of Initial Stage of SiC Growth and Application to CVD Method using Organosilicon Compounds Yuzuru NARITA, Kantarou MORIMOTO, Manabu MORIYAMA, Masayuki HARASHIMA, Kanji YASUI, Tadashi AKAHANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We observed Si(001)-c(4×4) surface at 675℃ by exposing dimethylsilane (DMS) using scanning tunneling maicroscopy (STM), and compared with the case of observation using reflection high-energy electron diffraction (RHEED). Although from the RHEED intensity profiles 3C-SiC spots appeared after diffraction spots originated c(4×4) structure disappeared, the islands were formed on c(4×4) surface measaured by STM. Therefore, initial growth rate was redefined in the case of MMS or DMS, and the activation energies of SiC initial growth were calculated to be 43 and 46kcal/mol. These values were the same as that of hydrogen desorption from Si(001) surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon Carbide / RHEED intensity / STM / Si(001)-c(4×4) surface / Hydrogen desorption |
| Paper # | CPM2003-134 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/11/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reinterpretation of Initial Stage of SiC Growth and Application to CVD Method using Organosilicon Compounds |
| Sub Title (in English) | |
| Keyword(1) | Silicon Carbide |
| Keyword(2) | RHEED intensity |
| Keyword(3) | STM |
| Keyword(4) | Si(001)-c(4×4) surface |
| Keyword(5) | Hydrogen desorption |
| 1st Author's Name | Yuzuru NARITA |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Kantarou MORIMOTO |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Manabu MORIYAMA |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 4th Author's Name | Masayuki HARASHIMA |
| 4th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 5th Author's Name | Kanji YASUI |
| 5th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 6th Author's Name | Tadashi AKAHANE |
| 6th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 2003/11/3 |
| Paper # | CPM2003-134 |
| Volume (vol) | vol.103 |
| Number (no) | 411 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |