| Presentation | 2003/11/3 Growth of relaxed-SiGe using mixture target Kazuya YOSHIMORI, Kimihiro SASAKI, Tomonobu HATA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We are trying to fabricate of strained Si layer on non-strained SiGe heterostructure which will enhanced performance of the ULSI MOS devices. In this work, a relaxed Si_<0.75>Ge_<0.25> for formation of strained Si was grown using the ion beam sputter (IBS) method with a SiGe mixture target. The crystallinity of the SiGe grown by the IBS, was poor and was not remarkably improved by increase of thickness and substrate temperature. We found that SiGe relaxes with. For result of raman scattering spectroscopy analysis, we allow that Si-Ge bond and non-strain Si-Si and tensility Si-Si bond exist in the SiGe, that SiGe peak detected at X-rays diffraction (XRD) shifts to the high angle side with reduction of tensility Si-Si peak intensity and increase of non-strain Si-Si peak intensity. Such tendency was greatly clarified. Insertion of Si buffer layer is suggested as method to improve crystallization of SiGe. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ion beam sputtering / IBS / strained-Si / SiGe / strain-relaxed SiGe |
| Paper # | CPM2003-133 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2003/11/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of relaxed-SiGe using mixture target |
| Sub Title (in English) | |
| Keyword(1) | ion beam sputtering |
| Keyword(2) | IBS |
| Keyword(3) | strained-Si |
| Keyword(4) | SiGe |
| Keyword(5) | strain-relaxed SiGe |
| 1st Author's Name | Kazuya YOSHIMORI |
| 1st Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University() |
| 2nd Author's Name | Kimihiro SASAKI |
| 2nd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
| 3rd Author's Name | Tomonobu HATA |
| 3rd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
| Date | 2003/11/3 |
| Paper # | CPM2003-133 |
| Volume (vol) | vol.103 |
| Number (no) | 411 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |