| Presentation | 2003/11/3 High-resolution x-ray diffraction study of Si_<0.75>Ge_<0.25> alloy layers with Sb mediated LT-Si buffers M. M. Rahman, S. Q. Zheng, T. Tambo, C. Tatsuyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-resolution x-ray diffraction was used to determine the residual strain in the Si_<0.75>Ge_<0.25> alloy with Sb mediated low temperature grown Si (LT-Si) buffer layers as a function of the growth temperature of the buffer layers. A very thin Ge layer was grown just before LT-Si, which may be favorable for the creation of dislocation nucleation sites. Residual strain of the alloy layers decreased with decreasing of the growth temperature of the buffer layers and reached to a lower value of about-0.06% with 300℃-grown buffer. Topographic study by AFM revealed very smooth surfaces of the alloys. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-resolution x-ray diffraction (HRXRD) / Low temperature grown Si buffer (LT-Si) / X-ray reflectivity / Atomic force microscopy (AFM) |
| Paper # | CPM2003-132 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/11/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-resolution x-ray diffraction study of Si_<0.75>Ge_<0.25> alloy layers with Sb mediated LT-Si buffers |
| Sub Title (in English) | |
| Keyword(1) | High-resolution x-ray diffraction (HRXRD) |
| Keyword(2) | Low temperature grown Si buffer (LT-Si) |
| Keyword(3) | X-ray reflectivity |
| Keyword(4) | Atomic force microscopy (AFM) |
| 1st Author's Name | M. M. Rahman |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama Universiy() |
| 2nd Author's Name | S. Q. Zheng |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama Universiy |
| 3rd Author's Name | T. Tambo |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama Universiy |
| 4th Author's Name | C. Tatsuyama |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama Universiy |
| Date | 2003/11/3 |
| Paper # | CPM2003-132 |
| Volume (vol) | vol.103 |
| Number (no) | 411 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |