Presentation 2003/9/26
Drain Current DLTS of AlGaN/GaN HEMTs
T. Okino, M. Ochiai, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani,
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Abstract(in English) The transient behaviour of AlGaN/GaN HEMTs was studied by current DLTS. One electron trap and two hole-trap-like signals were observed. The electron trap had an activation energy of 0.61 eV, which was similar to the defect level in n-GaN obtained by capacitance DLTS. It has been pointed out that the hole-trap-like signals did not originate from changes in hole trap population in the channel, but probably reflected the changes in the electron population in the surface states of the HEMT access regions.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN-GaN HEMT / Current DLTS / The electron trap / Hole-trap-like signals
Paper # ED2003-161,CPM2003-131,LQE2003-79
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Committee CPM
Conference Date 2003/9/26(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Drain Current DLTS of AlGaN/GaN HEMTs
Sub Title (in English)
Keyword(1) AlGaN-GaN HEMT
Keyword(2) Current DLTS
Keyword(3) The electron trap
Keyword(4) Hole-trap-like signals
1st Author's Name T. Okino
1st Author's Affiliation Department of Quantum Engineering, Nagoya University()
2nd Author's Name M. Ochiai
2nd Author's Affiliation Department of Quantum Engineering, Nagoya University
3rd Author's Name Y. Ohno
3rd Author's Affiliation Department of Quantum Engineering, Nagoya University
4th Author's Name S. Kishimoto
4th Author's Affiliation Department of Quantum Engineering, Nagoya University
5th Author's Name K. Maezawa
5th Author's Affiliation Department of Quantum Engineering, Nagoya University
6th Author's Name T. Mizutani
6th Author's Affiliation Department of Quantum Engineering, Nagoya University
Date 2003/9/26
Paper # ED2003-161,CPM2003-131,LQE2003-79
Volume (vol) vol.103
Number (no) 344
Page pp.pp.-
#Pages 4
Date of Issue