| Presentation | 2003/9/26 High-Efficiency High-Power GaN-HEMT Toshihide KIKKAWA, Masahito KANAMURA, Shigeru YOKOKAWA, Nobuo ODACHI, Mitsunori YOKOYAMA, Masahiro NISHI, Masahiro TANAKA, Tsutomu Igarashi, Yasunori TATENO, Naoki HARA, Kazukiyo JOSHIN, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have focused on high-efficiency operation using AlGaN/GaN HEMTs. We obtained 124 W CW output power at 55 V drain bias voltage with maximum power added efficiency (PAE) of 56%. We also demonstrated low distortion performance which fulfilled W-CDMA system requirements, such as adjacent channel power ratio (ACPR). We also investigated preliminary reliability test and fabricatied HEMT on large diameter wafer using stepper lithography. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / HEMT / FET / power / base station / efficiency / surface change / current collapse / high voltage operation |
| Paper # | ED2003-160,CPM2003-130,LQE2003-78 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/9/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Efficiency High-Power GaN-HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | HEMT |
| Keyword(4) | FET |
| Keyword(5) | power |
| Keyword(6) | base station |
| Keyword(7) | efficiency |
| Keyword(8) | surface change |
| Keyword(9) | current collapse |
| Keyword(10) | high voltage operation |
| 1st Author's Name | Toshihide KIKKAWA |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Masahito KANAMURA |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Shigeru YOKOKAWA |
| 3rd Author's Affiliation | Fujitsu Quantum Devices Ltd. |
| 4th Author's Name | Nobuo ODACHI |
| 4th Author's Affiliation | Fujitsu Quantum Devices Ltd. |
| 5th Author's Name | Mitsunori YOKOYAMA |
| 5th Author's Affiliation | Fujitsu Quantum Devices Ltd. |
| 6th Author's Name | Masahiro NISHI |
| 6th Author's Affiliation | Fujitsu Quantum Devices Ltd. |
| 7th Author's Name | Masahiro TANAKA |
| 7th Author's Affiliation | Fujitsu Quantum Devices Ltd. |
| 8th Author's Name | Tsutomu Igarashi |
| 8th Author's Affiliation | Fujitsu Quantum Devices Ltd. |
| 9th Author's Name | Yasunori TATENO |
| 9th Author's Affiliation | Fujitsu Quantum Devices Ltd. |
| 10th Author's Name | Naoki HARA |
| 10th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 11th Author's Name | Kazukiyo JOSHIN |
| 11th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2003/9/26 |
| Paper # | ED2003-160,CPM2003-130,LQE2003-78 |
| Volume (vol) | vol.103 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |