| Presentation | 2003/9/26 Design of GaN Power-Device with Field Plate Structure Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN-HEMTs are very attractive for switching power devices for motor drive and power supply applications due to the high critical field and the high mobility in 2DEG channel. High breakdown voltage GaN-HEMTs were fabricated and demonstrated. The fabricated devices realized the breakdown voltage of 600 V by the field plate technique and the low on-state resistance of 3.3 mΩcm^2, which is 20 times lower than that of silicon MOSFETs. The trade-off characteristics between the breakdown voltage and the on-resistance can be improved by the optimized design of the field plate structure and electrode contact region. The optimized on-resistance can be estimated about 0.5mΩcm^2 for 600 V device. The drain field plate structure increases the breakdown voltage maintaining the GaN layer thickness. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Power Device / Low On-Resistance / R_ |
| Paper # | ED2003-159,CPM2003-129,LQE2003-77 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/9/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design of GaN Power-Device with Field Plate Structure |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Power Device |
| Keyword(3) | Low On-Resistance |
| Keyword(4) | R_ |
| Keyword(5) | Field Plate |
| 1st Author's Name | Wataru Saito |
| 1st Author's Affiliation | Toshiba Corp. Semiconductor Comp.() |
| 2nd Author's Name | Yoshiharu Takada |
| 2nd Author's Affiliation | Toshiba Corp. Semiconductor Comp. and R&D Center |
| 3rd Author's Name | Masahiko Kuraguchi |
| 3rd Author's Affiliation | Toshiba Corp. Semiconductor Comp. and R&D Center |
| 4th Author's Name | Kunio Tsuda |
| 4th Author's Affiliation | Toshiba Corp. Semiconductor Comp. and R&D Center |
| 5th Author's Name | Ichiro Omura |
| 5th Author's Affiliation | Toshiba Corp. Semiconductor Comp. |
| 6th Author's Name | Tsuneo Ogura |
| 6th Author's Affiliation | Toshiba Corp. Semiconductor Comp. |
| Date | 2003/9/26 |
| Paper # | ED2003-159,CPM2003-129,LQE2003-77 |
| Volume (vol) | vol.103 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |