Presentation | 2003/9/26 High-Power Recessed-Gate AlGaN/GaN Heterojunction Field-Plate FET Yasuhiro OKAMOTO, Yuji ANDO, Kohji HATAYA, Takashi INOUE, Tatsuo NAKAYAMA, Hironobu MIYAMOTO, Masaaki KUZUHARA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recessed-gate AlGaN/GaN heterojunction FET with a field plate (FP) was successfully fabricated. More than 4dB improvement in the small signal gain was achieved due to higher transconductance. A series of current collapse measurements revealed that the recessed-gate structure can suppress the effect of surface trap. A 24mm-wide FP-FET exhibited 120W output power, 9.2dB linear gain, and 54% power-added efficiency at a drain bias of 34V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / FET / Field plate / Recess |
Paper # | ED2003-158,CPM2003-128,LQE2003-76 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2003/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High-Power Recessed-Gate AlGaN/GaN Heterojunction Field-Plate FET |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | FET |
Keyword(3) | Field plate |
Keyword(4) | Recess |
1st Author's Name | Yasuhiro OKAMOTO |
1st Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices() |
2nd Author's Name | Yuji ANDO |
2nd Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
3rd Author's Name | Kohji HATAYA |
3rd Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
4th Author's Name | Takashi INOUE |
4th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
5th Author's Name | Tatsuo NAKAYAMA |
5th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
6th Author's Name | Hironobu MIYAMOTO |
6th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
7th Author's Name | Masaaki KUZUHARA |
7th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
Date | 2003/9/26 |
Paper # | ED2003-158,CPM2003-128,LQE2003-76 |
Volume (vol) | vol.103 |
Number (no) | 344 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |