| Presentation | 2003/9/26 High Trans-conductance Recessed Gate AlGaN/GaN HEMT on SiC Substrate Juro Mita, Hideyuki Okita, Katsuaki KAIFU, Tomoyuki YAMADA, Yoshiaki SANO, Takashi EGAWA, Hiroyasu ISHIKAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recessed Gate AlGaN/GaN high electron mobility transistors (HEMTs) grown on SiliconCarbide (SiC) substrate have been fabricated. In order to improve FET performances, we optimized the two kinds of arrangement of gate electrode of HEMT, ie. 1) distance of gate electrode and source electrode and 2) distance of gate electrode and channel where 2 dimensional electron gas lies. 0.21 μm gate-length AlGaN/GaN-HEMTs with recessed gate were successfully fabricated and obtained trans-conductance wad as high as 525 mS/mm. In this paper we describe the optimisation of the arrangements of gate electrodes and the results of DC/RF measurements of our HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC substrate / recess-gate / AlGaN-GaN HEMT / maximum trans-conductance |
| Paper # | ED2003-157,CPM2003-127,LQE2003-75 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/9/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Trans-conductance Recessed Gate AlGaN/GaN HEMT on SiC Substrate |
| Sub Title (in English) | |
| Keyword(1) | SiC substrate |
| Keyword(2) | recess-gate |
| Keyword(3) | AlGaN-GaN HEMT |
| Keyword(4) | maximum trans-conductance |
| 1st Author's Name | Juro Mita |
| 1st Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | Hideyuki Okita |
| 2nd Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | Katsuaki KAIFU |
| 3rd Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Tomoyuki YAMADA |
| 4th Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 5th Author's Name | Yoshiaki SANO |
| 5th Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 6th Author's Name | Takashi EGAWA |
| 6th Author's Affiliation | Nagoya Institute of Technology, Research Center for Nano-Device and System |
| 7th Author's Name | Hiroyasu ISHIKAWA |
| 7th Author's Affiliation | Nagoya Institute of Technology, Research Center for Nano-Device and System |
| Date | 2003/9/26 |
| Paper # | ED2003-157,CPM2003-127,LQE2003-75 |
| Volume (vol) | vol.103 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |