| Presentation | 2003/9/26 Ka-band 3W-Power AlGaN/GaN Heterojnction-FET Takashi INOUE, Yuhji ANDO, Tatsuo NAKAYAMA, Hironobu MIYAMOTO, Yasuhiro OKAMOTO, Kohji HATAYA, Masaaki KUZUHARA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes the first successful 3watt-level 30GHz Ka-band power operation of an AlGaN/GaN heterojunction FET fabricated on a SiC substrate. The FET layout configuration was improved and the device dimensions were optimized to take advantage of the high breakdown voltage, high-current, and high-gain characteristics of the short-channel GaN-based FET for advanced power performance. State-of-the-art performance of more than 3W at Ka-band has been achieved employing a single chip having a qate width of 0.45mm. The fabricated FET with a gate-width of 100μm exhibited an MSG of 9.6dB at 30GHz (6.6dB at 60GHz) for a gate-length of 0.25μm, indicating that the short-channel AlGaN/GaN heterojunction FET is promising for a variety of high-power applications at Ka-band and above. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ka-band / AlGaN-GaN / Heterojunction FET / T-shaped Gate / SiC Substrate |
| Paper # | ED2003-156,CPM2003-126,LQE2003-74 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/9/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ka-band 3W-Power AlGaN/GaN Heterojnction-FET |
| Sub Title (in English) | |
| Keyword(1) | Ka-band |
| Keyword(2) | AlGaN-GaN |
| Keyword(3) | Heterojunction FET |
| Keyword(4) | T-shaped Gate |
| Keyword(5) | SiC Substrate |
| 1st Author's Name | Takashi INOUE |
| 1st Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices() |
| 2nd Author's Name | Yuhji ANDO |
| 2nd Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
| 3rd Author's Name | Tatsuo NAKAYAMA |
| 3rd Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
| 4th Author's Name | Hironobu MIYAMOTO |
| 4th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
| 5th Author's Name | Yasuhiro OKAMOTO |
| 5th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
| 6th Author's Name | Kohji HATAYA |
| 6th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
| 7th Author's Name | Masaaki KUZUHARA |
| 7th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
| Date | 2003/9/26 |
| Paper # | ED2003-156,CPM2003-126,LQE2003-74 |
| Volume (vol) | vol.103 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |