Presentation | 2003/9/26 A consideration of orientation effect on AlGaN/GaN MODFETs Hidetoshi ISHIDA, Tomohiro MURATA, Atsuhiko KANDA, Motonori ISHII, Yutaka HIROSE, Yasuhiro UEMOTO, Tsuyoshi TANAKA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The orientation effect on AlGaN/GaN MODFETs has been demonstrated. The MODFETs with different gate direction with the 15 degree step on a substrate show the same electrical property. The piezoelectric charges induced under the gate electrode which cause the shift of electrical characteristics of GaAs FETs are calculated by using a finite element method. This simulation solves the piezoelectric equations with piezoelectric and elastic stiffness constants. These calculated charges do not depend on the gate direction which is consistent to the experimental result. The fact that these results are due to the symmetry of the piezoelectric and elastic stiffness constants is mathematically clarified. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / FET / direction / stress / piezoelectric / finite element method |
Paper # | ED2003-155,CPM2003-125,LQE2003-73 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2003/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A consideration of orientation effect on AlGaN/GaN MODFETs |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | FET |
Keyword(3) | direction |
Keyword(4) | stress |
Keyword(5) | piezoelectric |
Keyword(6) | finite element method |
1st Author's Name | Hidetoshi ISHIDA |
1st Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd.() |
2nd Author's Name | Tomohiro MURATA |
2nd Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
3rd Author's Name | Atsuhiko KANDA |
3rd Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
4th Author's Name | Motonori ISHII |
4th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
5th Author's Name | Yutaka HIROSE |
5th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
6th Author's Name | Yasuhiro UEMOTO |
6th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
7th Author's Name | Tsuyoshi TANAKA |
7th Author's Affiliation | Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd. |
Date | 2003/9/26 |
Paper # | ED2003-155,CPM2003-125,LQE2003-73 |
Volume (vol) | vol.103 |
Number (no) | 344 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |