Presentation | 2003/9/26 Improvement of Breakdown Voltage for AlGaN/GaN HFETs on Si Substrates Osamu MACHIDA, Masataka YANAGIHARA, Emiko CHINO, Sinichi IWAKAMI, Nobuo KANEKO, Hirokazu GOTO, Kohji OHTSUKA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Breakdown voltages of AlGaN/GaN HFETs on Si substrates were investigated. Using GaN/AlN buffer layer, undoped GaN layer and AlGaN layer were grown on Si substrates by metalorganic vapor phase epitaxy. It was confirmed that drain leakage current of HFET fabricated on thin epitaxial layers flows though the Si substrate by measuring the vertical characteristics. In case of thicker epitaxial layers, it was considered that drain leakage current flows via the upper part of GaN/AlN buffer layer and two-dimensional electron gas (channel) layer close to the surface. The leakage current was suppressed by element separation. Consequently, breakdown voltage of 550V or over was achieved. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / Hetero-junction FET / Breakdown voltage / Leakage current / Si substrates |
Paper # | ED2003-154,CPM2003-124,LQE2003-72 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2003/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of Breakdown Voltage for AlGaN/GaN HFETs on Si Substrates |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | Hetero-junction FET |
Keyword(3) | Breakdown voltage |
Keyword(4) | Leakage current |
Keyword(5) | Si substrates |
1st Author's Name | Osamu MACHIDA |
1st Author's Affiliation | Semiconductor Research and Development, Sanken Electric Co., Ltd.() |
2nd Author's Name | Masataka YANAGIHARA |
2nd Author's Affiliation | Semiconductor Research and Development, Sanken Electric Co., Ltd. |
3rd Author's Name | Emiko CHINO |
3rd Author's Affiliation | Semiconductor Research and Development, Sanken Electric Co., Ltd. |
4th Author's Name | Sinichi IWAKAMI |
4th Author's Affiliation | Semiconductor Research and Development, Sanken Electric Co., Ltd. |
5th Author's Name | Nobuo KANEKO |
5th Author's Affiliation | Semiconductor Research and Development, Sanken Electric Co., Ltd. |
6th Author's Name | Hirokazu GOTO |
6th Author's Affiliation | Semiconductor Research and Development, Sanken Electric Co., Ltd. |
7th Author's Name | Kohji OHTSUKA |
7th Author's Affiliation | Semiconductor Research and Development, Sanken Electric Co., Ltd. |
Date | 2003/9/26 |
Paper # | ED2003-154,CPM2003-124,LQE2003-72 |
Volume (vol) | vol.103 |
Number (no) | 344 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |