Presentation 2003/9/26
Improvement of Breakdown Voltage for AlGaN/GaN HFETs on Si Substrates
Osamu MACHIDA, Masataka YANAGIHARA, Emiko CHINO, Sinichi IWAKAMI, Nobuo KANEKO, Hirokazu GOTO, Kohji OHTSUKA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Breakdown voltages of AlGaN/GaN HFETs on Si substrates were investigated. Using GaN/AlN buffer layer, undoped GaN layer and AlGaN layer were grown on Si substrates by metalorganic vapor phase epitaxy. It was confirmed that drain leakage current of HFET fabricated on thin epitaxial layers flows though the Si substrate by measuring the vertical characteristics. In case of thicker epitaxial layers, it was considered that drain leakage current flows via the upper part of GaN/AlN buffer layer and two-dimensional electron gas (channel) layer close to the surface. The leakage current was suppressed by element separation. Consequently, breakdown voltage of 550V or over was achieved.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / Hetero-junction FET / Breakdown voltage / Leakage current / Si substrates
Paper # ED2003-154,CPM2003-124,LQE2003-72
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Conference Information
Committee CPM
Conference Date 2003/9/26(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of Breakdown Voltage for AlGaN/GaN HFETs on Si Substrates
Sub Title (in English)
Keyword(1) GaN
Keyword(2) Hetero-junction FET
Keyword(3) Breakdown voltage
Keyword(4) Leakage current
Keyword(5) Si substrates
1st Author's Name Osamu MACHIDA
1st Author's Affiliation Semiconductor Research and Development, Sanken Electric Co., Ltd.()
2nd Author's Name Masataka YANAGIHARA
2nd Author's Affiliation Semiconductor Research and Development, Sanken Electric Co., Ltd.
3rd Author's Name Emiko CHINO
3rd Author's Affiliation Semiconductor Research and Development, Sanken Electric Co., Ltd.
4th Author's Name Sinichi IWAKAMI
4th Author's Affiliation Semiconductor Research and Development, Sanken Electric Co., Ltd.
5th Author's Name Nobuo KANEKO
5th Author's Affiliation Semiconductor Research and Development, Sanken Electric Co., Ltd.
6th Author's Name Hirokazu GOTO
6th Author's Affiliation Semiconductor Research and Development, Sanken Electric Co., Ltd.
7th Author's Name Kohji OHTSUKA
7th Author's Affiliation Semiconductor Research and Development, Sanken Electric Co., Ltd.
Date 2003/9/26
Paper # ED2003-154,CPM2003-124,LQE2003-72
Volume (vol) vol.103
Number (no) 344
Page pp.pp.-
#Pages 6
Date of Issue