Presentation | 2003/9/26 Nitrogen deficiency on GaN and AlGaN surfaces induced during thermal and plasma processings Tamotsu Hashizume, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Effects of various device processings on chemical and electronic properties of AlGaN surfaces were investigated. The XPS analysis showed serious deterioration such as stoichiometry disorder and N-deficiency at the AlGaN surfaces processed by the high-temperature annealing, the H_2-plasma cleaning, the dry etching in CH_4/H_2/Ar plasma and the deposition of SiO_2. The N-deficiency could introduce a localized deep donor level related to N vacancy near-surface resion in AlGaN, probably causing serious reduction of the barrier heights at the AlGaN Schottky interfaces. A SiN_x passivation layer was effective in suppressing the formation of N-vacancy-related surface defects during device processings. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / surface / nitrogen vacancy / collapse / leakage |
Paper # | ED2003-153,CPM2003-123,LQE2003-71 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2003/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Nitrogen deficiency on GaN and AlGaN surfaces induced during thermal and plasma processings |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | surface |
Keyword(4) | nitrogen vacancy |
Keyword(5) | collapse |
Keyword(6) | leakage |
1st Author's Name | Tamotsu Hashizume |
1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
Date | 2003/9/26 |
Paper # | ED2003-153,CPM2003-123,LQE2003-71 |
Volume (vol) | vol.103 |
Number (no) | 344 |
Page | pp.pp.- |
#Pages | 4 |
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