Presentation	2003/9/26 Effect of SiN films on thermal stability of AlGaN/GaN 2DEG structures Kenji SHIOJIMA, Suehiro SUGITANI, Naoteru SHIGEKAWA,
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Abstract(in English)	We found that the sheet resistance (R_) of the channel of AlGaN/GaN two-dimensional electron gs structures increases when annealing is performed below the growth tempeperature when AlGaN barrier layer is thinner than 200 Å and poor crystal quality. This time, we examined surface passivation with SiN films to stabilize R_. The R_ was stable for the AlGaN/GaN HEMT structure with the SiN passivation after annealing at 800℃ for 30 s, when the AlGaN barrier layer was as thin as 152Å. We also confirmed that the SiN films were suitable for Ti/Al ohmic contacts upon annealing at 620℃ for 30 s. These results are an important consideration in HEMT fabrication for higher RF performance with thin AlGaN barrier layers.
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Keyword(in English)	AlGaN-GaN heterostructure / Sheet resistance / Thermal stability / HEMT / SiN passivation
Paper #	ED2003-152,CPM2003-122,LQE2003-70
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Conference Information
Committee	CPM
Conference Date	2003/9/26(1days)
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Paper Information
Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Effect of SiN films on thermal stability of AlGaN/GaN 2DEG structures
Sub Title (in English)
Keyword(1)	AlGaN-GaN heterostructure
Keyword(2)	Sheet resistance
Keyword(3)	Thermal stability
Keyword(4)	HEMT
Keyword(5)	SiN passivation
1st Author's Name	Kenji SHIOJIMA
1st Author's Affiliation	NTT Corporation NTT Photonics Laboratories()
2nd Author's Name	Suehiro SUGITANI
2nd Author's Affiliation	NTT Corporation NTT Photonics Laboratories
3rd Author's Name	Naoteru SHIGEKAWA
3rd Author's Affiliation	NTT Corporation NTT Photonics Laboratories
Date	2003/9/26
Paper #	ED2003-152,CPM2003-122,LQE2003-70
Volume (vol)	vol.103
Number (no)	344
Page	pp.pp.-
#Pages	4
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