Presentation | 2003/9/26 Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN Takuma NANJO, Naruhisa MIURA, Toshiyuki OISHI, Muneyoshi SUITA, Yuji ABE, Tatsuo OZEKI, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Schottky diodes with high performance were fabricated on n-GaN and AlGaN/GaN heterostructure by annealing the metal system which contains Pt on thin Ni. A barrier height of Schottky diodes (φ_B) depends on the work function of the metal on thin Ni after the annealing. High φ_B of 1.3 eV was obtained for the annealed Ni/Pt/Au on n-GaN. This metal system had superior φ_B than Pt/Au after annealing. Because of high φ_B, reverse current was as low as 7.7 x 10^<-6>/cm^2 at -2V for Schottky diode on AlGaN/GaN. AlGaN/GaN HEMTs (high electron mobility transistors) with the gate electrode of the annealed Ni/Pt/Au were fabricated. The gate leakage current reduced without degrading the transconductance of the transistors. Moreover, off-state breakdown voltage increased from 114 to 200 V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Schottky diode / annealing / barrier height / GaN / AlGaN-GaN HEMT / off-state breakdown / gate leakage current |
Paper # | ED2003-151,CPM2003-121,LQE2003-69 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2003/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN |
Sub Title (in English) | |
Keyword(1) | Schottky diode |
Keyword(2) | annealing |
Keyword(3) | barrier height |
Keyword(4) | GaN |
Keyword(5) | AlGaN-GaN HEMT |
Keyword(6) | off-state breakdown |
Keyword(7) | gate leakage current |
1st Author's Name | Takuma NANJO |
1st Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation() |
2nd Author's Name | Naruhisa MIURA |
2nd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
3rd Author's Name | Toshiyuki OISHI |
3rd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
4th Author's Name | Muneyoshi SUITA |
4th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
5th Author's Name | Yuji ABE |
5th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
6th Author's Name | Tatsuo OZEKI |
6th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
7th Author's Name | Hiroyasu ISHIKAWA |
7th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
8th Author's Name | Takashi EGAWA |
8th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
Date | 2003/9/26 |
Paper # | ED2003-151,CPM2003-121,LQE2003-69 |
Volume (vol) | vol.103 |
Number (no) | 344 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |