| Presentation | 2003/9/26 Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN Takuma NANJO, Naruhisa MIURA, Toshiyuki OISHI, Muneyoshi SUITA, Yuji ABE, Tatsuo OZEKI, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Schottky diodes with high performance were fabricated on n-GaN and AlGaN/GaN heterostructure by annealing the metal system which contains Pt on thin Ni. A barrier height of Schottky diodes (φ_B) depends on the work function of the metal on thin Ni after the annealing. High φ_B of 1.3 eV was obtained for the annealed Ni/Pt/Au on n-GaN. This metal system had superior φ_B than Pt/Au after annealing. Because of high φ_B, reverse current was as low as 7.7 x 10^<-6>/cm^2 at -2V for Schottky diode on AlGaN/GaN. AlGaN/GaN HEMTs (high electron mobility transistors) with the gate electrode of the annealed Ni/Pt/Au were fabricated. The gate leakage current reduced without degrading the transconductance of the transistors. Moreover, off-state breakdown voltage increased from 114 to 200 V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Schottky diode / annealing / barrier height / GaN / AlGaN-GaN HEMT / off-state breakdown / gate leakage current |
| Paper # | ED2003-151,CPM2003-121,LQE2003-69 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/9/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN |
| Sub Title (in English) | |
| Keyword(1) | Schottky diode |
| Keyword(2) | annealing |
| Keyword(3) | barrier height |
| Keyword(4) | GaN |
| Keyword(5) | AlGaN-GaN HEMT |
| Keyword(6) | off-state breakdown |
| Keyword(7) | gate leakage current |
| 1st Author's Name | Takuma NANJO |
| 1st Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Naruhisa MIURA |
| 2nd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 3rd Author's Name | Toshiyuki OISHI |
| 3rd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 4th Author's Name | Muneyoshi SUITA |
| 4th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 5th Author's Name | Yuji ABE |
| 5th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 6th Author's Name | Tatsuo OZEKI |
| 6th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 7th Author's Name | Hiroyasu ISHIKAWA |
| 7th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 8th Author's Name | Takashi EGAWA |
| 8th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2003/9/26 |
| Paper # | ED2003-151,CPM2003-121,LQE2003-69 |
| Volume (vol) | vol.103 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |