| Presentation | 2003/9/26 MOCVD growth of GaN films and AlGaN/GaN hetero-structures on 4 inch Si substrates Hiroyasu ISHIKAWA, Masahiro KATO, Takashi AOYAMA, Shinichi MATSUI, Maosheng HAO, Takashi EGAWA, Takashi JINBO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the crystal growth of GaN on 4 inch Si substrate with a AlGaN/AlN intermediate layer by MOCVD. Both the density of pits and full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing the thickness of AlGaN/AlN intermediate layer. No pits and crack were observed on the substrate with the AlGaN/AlN (40/8nm) intermediate layer. The FWHM of XRC for the 1-μm-thick GaN was 800 arcsec. AlGaN/GaN hetero-structures were also grown on 4-inch Si substrates. Room temperature Hall measurements exhibited sheet carrier density of 1.1～1.4×10^<13>cm^<-2> and electron mobilities of 900～1080 cm^2/V・s. The AlGaN/GaN HEMT on 4inch-Si substrate showed maximum extrinsic transconductance 142 mS/mm and drain-source current 395 mA/mm for a gate length 2 μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4-inch / Si substrate / GaN / AlGaN-GaN / MOCVD / two dimentional electron gas (2DEG) / HEMT |
| Paper # | ED2003-149,CPM2003-119,LQE2003-67 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/9/26(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOCVD growth of GaN films and AlGaN/GaN hetero-structures on 4 inch Si substrates |
| Sub Title (in English) | |
| Keyword(1) | 4-inch |
| Keyword(2) | Si substrate |
| Keyword(3) | GaN |
| Keyword(4) | AlGaN-GaN |
| Keyword(5) | MOCVD |
| Keyword(6) | two dimentional electron gas (2DEG) |
| Keyword(7) | HEMT |
| 1st Author's Name | Hiroyasu ISHIKAWA |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Masahiro KATO |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi AOYAMA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 4th Author's Name | Shinichi MATSUI |
| 4th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 5th Author's Name | Maosheng HAO |
| 5th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 6th Author's Name | Takashi EGAWA |
| 6th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 7th Author's Name | Takashi JINBO |
| 7th Author's Affiliation | Department if Environmental Technology and Urban Planning, Nagoya Institute of Technology |
| Date | 2003/9/26 |
| Paper # | ED2003-149,CPM2003-119,LQE2003-67 |
| Volume (vol) | vol.103 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 5 |
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