| Presentation | 2003/9/25 Reduction of Threading Dislocation in AlGaN with High Al Composition by Regrowth on Grooved Structure Masahiro ISHIDA, Masaaki YURI, Daisuke UEDA, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Crack-free AlGaN with a high Al composition were grown on an AlN template substrate. We found that low-dislocation-density regions are formed in the AlGaN layer regrown on grooved structure. By employing the regrowth technology twice, threding dislocations in the regrown AlGaN were reduced down to 5.2×10^7cm^<-2>. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / AlN template / Regrowth / Threding dislocation / Regrowth / Grooved structure / TEM / CL |
| Paper # | ED2003-140,CPM2003-110,LQE2003-58 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/9/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of Threading Dislocation in AlGaN with High Al Composition by Regrowth on Grooved Structure |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | AlN template |
| Keyword(3) | Regrowth |
| Keyword(4) | Threding dislocation |
| Keyword(5) | Regrowth |
| Keyword(6) | Grooved structure |
| Keyword(7) | TEM |
| Keyword(8) | CL |
| 1st Author's Name | Masahiro ISHIDA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Masaaki YURI |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Daisuke UEDA |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Hiroyasu ISHIKAWA |
| 4th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 5th Author's Name | Takashi EGAWA |
| 5th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2003/9/25 |
| Paper # | ED2003-140,CPM2003-110,LQE2003-58 |
| Volume (vol) | vol.103 |
| Number (no) | 343 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |