Presentation 2003/7/25
Sputtering-deposition of transparent conductive thin films on plastic film substrate
Hiro-omi KATO, Kentaro FUNATSU, Yoichi HOSHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to realize a high rate deposition of transparent conductive thin films on plastic film substrate, deposition of ITO thin films by using Facing target sputtering at various sputtering conditions was attempted. The crystal growth in the film was promoted significantly by an increase in oxygen gas flow rate during sputtering. Especially, at high sputtering gas pressure, large grain growth were observed in the film, which degrades surface smoothness significantly. The internal film stress changed with sputtering gas pressure and oxygen gas flow rate, and reduction of the oxygen gas flow rate and increase hi the sputtering gas pressure are effective to decrease the compressive stress in the film. In the deposition of the films on polycarbonate film substrate with 80 μm thick, films could be deposited at a deposition rate as high as 50 nm/min, although higher deposition rate caused a thermal damage of the substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) transparent conductive film / ITO / film substrate / acing target sputtering(FTS) / ow temperature deposition
Paper # CPM2003-71
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Conference Information
Committee CPM
Conference Date 2003/7/25(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Sputtering-deposition of transparent conductive thin films on plastic film substrate
Sub Title (in English)
Keyword(1) transparent conductive film
Keyword(2) ITO
Keyword(3) film substrate
Keyword(4) acing target sputtering(FTS)
Keyword(5) ow temperature deposition
1st Author's Name Hiro-omi KATO
1st Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics()
2nd Author's Name Kentaro FUNATSU
2nd Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics
3rd Author's Name Yoichi HOSHI
3rd Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics
Date 2003/7/25
Paper # CPM2003-71
Volume (vol) vol.103
Number (no) 245
Page pp.pp.-
#Pages 6
Date of Issue