Presentation | 2003/7/25 Sputtering-deposition of transparent conductive thin films on plastic film substrate Hiro-omi KATO, Kentaro FUNATSU, Yoichi HOSHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to realize a high rate deposition of transparent conductive thin films on plastic film substrate, deposition of ITO thin films by using Facing target sputtering at various sputtering conditions was attempted. The crystal growth in the film was promoted significantly by an increase in oxygen gas flow rate during sputtering. Especially, at high sputtering gas pressure, large grain growth were observed in the film, which degrades surface smoothness significantly. The internal film stress changed with sputtering gas pressure and oxygen gas flow rate, and reduction of the oxygen gas flow rate and increase hi the sputtering gas pressure are effective to decrease the compressive stress in the film. In the deposition of the films on polycarbonate film substrate with 80 μm thick, films could be deposited at a deposition rate as high as 50 nm/min, although higher deposition rate caused a thermal damage of the substrate. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | transparent conductive film / ITO / film substrate / acing target sputtering(FTS) / ow temperature deposition |
Paper # | CPM2003-71 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2003/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Sputtering-deposition of transparent conductive thin films on plastic film substrate |
Sub Title (in English) | |
Keyword(1) | transparent conductive film |
Keyword(2) | ITO |
Keyword(3) | film substrate |
Keyword(4) | acing target sputtering(FTS) |
Keyword(5) | ow temperature deposition |
1st Author's Name | Hiro-omi KATO |
1st Author's Affiliation | Faculty of Engineering, Tokyo Institute of Polytechnics() |
2nd Author's Name | Kentaro FUNATSU |
2nd Author's Affiliation | Faculty of Engineering, Tokyo Institute of Polytechnics |
3rd Author's Name | Yoichi HOSHI |
3rd Author's Affiliation | Faculty of Engineering, Tokyo Institute of Polytechnics |
Date | 2003/7/25 |
Paper # | CPM2003-71 |
Volume (vol) | vol.103 |
Number (no) | 245 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |