| Presentation | 2003/7/25 Electrical properties and structure of titanium oxide thin films formed by metalorganic decomposition. Shigeo TANAKA, Mikio WATANABE, Hisashi FUKUDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High dielectric (high-k) thin films have attained considerable attention as possible replacements for dielectric insulators of sub-0.1 μm MOSFET in future ULSIs. Bulk TiO_2 has higher dielectric constant as compared to another high-k dielectric materials. Thus, TiO_2 is one of the expected high-k dielectric materials. However, leakage current of TiO_2 increased when the grain growth in the crystal becomes to proceed. Silicate could form thermally stable amorphous structure. Therefore, it was thought that silicate is able to overcome these problems. In this study, we have formed titanium-silicate thin films on a Si substrate by metalorganic decomposition (MOD). The crystal structure and the electrical properties of the films were investigated. Titanium silicate films could suppress leakage current caused by grain growth after high thermal annealing. |
| Keyword(in Japanese) | (See Japanese page) |
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| Paper # | CPM2003-69 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical properties and structure of titanium oxide thin films formed by metalorganic decomposition. |
| Sub Title (in English) | |
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| 1st Author's Name | Shigeo TANAKA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering , Muroran Institute of Technology.() |
| 2nd Author's Name | Mikio WATANABE |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering , Muroran Institute of Technology. |
| 3rd Author's Name | Hisashi FUKUDA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering , Muroran Institute of Technology. |
| Date | 2003/7/25 |
| Paper # | CPM2003-69 |
| Volume (vol) | vol.103 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |