| Presentation | 2003/7/25 Structural and electrical properties of Ta_2O_5 thin films formed by metalorganic decomposition Hiroaki SAITO, Masahiro MIZUKAMI, Hisashi FUKUDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, tantalum oxide (Ta_2O_5) - Tetraethoxysilane (TEOS: (Si(OC_2H_5)_4) composite thin films were formed on silicon (Si) by metalorganic decomposition (MOD) for obtaining high performance Ta_O_5 thin film. The results of structural evaluation showed that crystallization proceeds gradually with increasing annealing temperature, while crystallization decrease with increasing TEOS ratio. The electric characteristics showed that the decrease of dielectric constant and leakage current occurs gradually with increasing of TEOS ratio. Fairly good dielectric properties are obtained for the 0.88Ta_2O_5-0.12TEOS film annealed at 900℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / gate dielectric / metalorganic decomposition / Ta_2O_5 / TEOS |
| Paper # | CPM2003-68 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structural and electrical properties of Ta_2O_5 thin films formed by metalorganic decomposition |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | gate dielectric |
| Keyword(3) | metalorganic decomposition |
| Keyword(4) | Ta_2O_5 |
| Keyword(5) | TEOS |
| 1st Author's Name | Hiroaki SAITO |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology() |
| 2nd Author's Name | Masahiro MIZUKAMI |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
| 3rd Author's Name | Hisashi FUKUDA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
| Date | 2003/7/25 |
| Paper # | CPM2003-68 |
| Volume (vol) | vol.103 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |