| Presentation | 2003/7/25 Failure mechanism of thin VN barrier between Cu interconnects and SiO_2 layer Mayumi B. Takeyama, Takaomi Itoi, Osamu Yanada, Kazumi Satoh, Atsushi Noya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | As a thin barrier applicable in the 90 nm rule metallization, the VN thin barrier with ～10 nm in thickness was examined from the point of view of the barrier properties and the failure mechanism of the Cu/VN/SiO_2/Si system. The system showed the excellent thermal stability after annealing at 600 ℃ or higher for 1 h without structural change of the barrier and interfacial reaction in the system upon annealing. This is because the VN barrier has excellent properties in chemical stability and in structural stability. The further annealing up to 800 ℃ for 1 h led to the grain growth of the barrier in the lateral direction, resulting in the interdiffusion between the Cu interconnects and SiO_2 layers. The Cu/VN/SiO_2/Si system was fairly stable until the annealing temperature at which lateral grain growth of VN barrier led to the failure of continuity of the barrier. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si-ULSI / Cu interconnects / diffusion barrier / nitride / nano-crystalline |
| Paper # | CPM2003-67 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Failure mechanism of thin VN barrier between Cu interconnects and SiO_2 layer |
| Sub Title (in English) | |
| Keyword(1) | Si-ULSI |
| Keyword(2) | Cu interconnects |
| Keyword(3) | diffusion barrier |
| Keyword(4) | nitride |
| Keyword(5) | nano-crystalline |
| 1st Author's Name | Mayumi B. Takeyama |
| 1st Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Takaomi Itoi |
| 2nd Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology:(Present address)Chiba University |
| 3rd Author's Name | Osamu Yanada |
| 3rd Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology:(Present address)SEC Corporation Ltd. |
| 4th Author's Name | Kazumi Satoh |
| 4th Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology:(Present address)Hitachi Kokusai Electric Inc. |
| 5th Author's Name | Atsushi Noya |
| 5th Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology |
| Date | 2003/7/25 |
| Paper # | CPM2003-67 |
| Volume (vol) | vol.103 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |