| Presentation | 2003/7/25 Thermal stability of Cu/TiHfN/Si contact system using thin TiHfN barrier Mayumi B. Takeyama, Tsutomu Kosugi, Zun'ichi Igarashi, Atsushi Noya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A TiHfN barrier with -10 nm in thickness for Cu/Si contact was preliminary examined. The TiHfN barrier was a combination of TiN and HfN with low resistive materials and in the same NaCl structure randomly substituting cation sites with Ti and Hf atoms, and the resistivity was relatively low among reported ternary nitride barriers. The Cu/TiHfN(10nm)/Si contact tolerated annealing at temperatures up to 500 ℃ or higher without interracial reaction. It was revealed that the TiHfN barrier showed fundamentally effective barrier properties as a very thin barrier in Cu metallization. It was also revealed that further examinations to evaluate the suitable composition of the ternary nitride were required to realize the best barrier properties. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si-ULSI / Cu metallization / iffusion barrier / nitride |
| Paper # | CPM2003-66 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Thermal stability of Cu/TiHfN/Si contact system using thin TiHfN barrier |
| Sub Title (in English) | |
| Keyword(1) | Si-ULSI |
| Keyword(2) | Cu metallization |
| Keyword(3) | iffusion barrier |
| Keyword(4) | nitride |
| 1st Author's Name | Mayumi B. Takeyama |
| 1st Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Tsutomu Kosugi |
| 2nd Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Zun'ichi Igarashi |
| 3rd Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology:(Present address)Altech Co. |
| 4th Author's Name | Atsushi Noya |
| 4th Author's Affiliation | Dept. Electrical and Electronic Engineering, Kitami Institute of Technology |
| Date | 2003/7/25 |
| Paper # | CPM2003-66 |
| Volume (vol) | vol.103 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |