| Presentation | 2003/7/25 Spectro-ellipsometric study of thin films for ULSI process : Optical properties of transition metal nitride barrier layers Jan MISTRIK, Kamil POSTAVA, Roman ANTOS, Tomuo YAMAGUCHI, Mayumi TAKEYAMA, Atsushi NOYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low-k materials for interlayer dielectrics and diffusion barrier layers for Cu metallization seems to be inevitable in the further ULSI process. The present report is focused on the study of transition metal nitride barrier layers especially to the spectro-ellipsometoric evaluation of these materials. The studied samples were reactively sputtered Titaniun Nitride (TiN/SiO_2/Si), Tantalum Nitride (TaN_x/SiO_2) and Vanadium Nitride (VN/Si). VN layer and several TaN_x layers with different deposition temperatures (200-400℃) were prepared optically thick. Lorentz-Drude parameterization of dielectric function of thin TiN films were determined by simultaneous fitting of ellipsometric and optical reflectivity spectra. VN and TiN optical constants show strong metallic character whereas TaN_x dielectric functions depending on the substrate temperature present featureless free electron behavior for low substrate temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | barrier layers / transition metal nitrides / spectroscopic ellipsometry / ULSI circuits |
| Paper # | CPM2003-65 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Spectro-ellipsometric study of thin films for ULSI process : Optical properties of transition metal nitride barrier layers |
| Sub Title (in English) | |
| Keyword(1) | barrier layers |
| Keyword(2) | transition metal nitrides |
| Keyword(3) | spectroscopic ellipsometry |
| Keyword(4) | ULSI circuits |
| 1st Author's Name | Jan MISTRIK |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Kamil POSTAVA |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Roman ANTOS |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Tomuo YAMAGUCHI |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Mayumi TAKEYAMA |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 6th Author's Name | Atsushi NOYA |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Kitami Institute of Technology |
| Date | 2003/7/25 |
| Paper # | CPM2003-65 |
| Volume (vol) | vol.103 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |