| Presentation | 2003/7/25 Growth Temperature Dependence of Atomic Level Structures at the Heterointerfaces of InP/GaInAs/InP and GaAs/GaInP/GaAs Masao TABUCHI, Shin'ichi HISADOME, Ryo OGA, Atsushi KOIZUMI, Yasufumi FUJIWARA, Yoshikazu TAKEDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The atomic level structure of semiconductor heterostructures and their growth condition dependences (including growth technique itself) were elucidated by the X-ray CTR (crystal truncation rod) scattering technique. Though the growth facilities such as MBE and OMVPE have been believed to be able to fabricate heterostructures at the atomically controlled accuracy, the real structures were quite graded and very much dependent on growth conditions. Based on the investigation on the InP/GaInAs/InP heterostructures, the origin of the intense and deep PL peak from the GaAs/GaInP/GaAs heterostuctures was proved to be the In distribution into GaAs, which forms a GaInAs quantum well at the heterointerface. The lower growth temperature suppressed the In distribution and this peak simultaneously. Thus, it is demonstrated that the X-ray CTR scattering technique is a very powerful technique to reveal the atomic level structures of quantum wells and heterointerfaces. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | X-ray CTR scattering technique / OMVPE / MBE / Heterostructures / InP-GaInAs-InP / GaAs-GaInP-GaAs |
| Paper # | CPM2003-63 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth Temperature Dependence of Atomic Level Structures at the Heterointerfaces of InP/GaInAs/InP and GaAs/GaInP/GaAs |
| Sub Title (in English) | |
| Keyword(1) | X-ray CTR scattering technique |
| Keyword(2) | OMVPE |
| Keyword(3) | MBE |
| Keyword(4) | Heterostructures |
| Keyword(5) | InP-GaInAs-InP |
| Keyword(6) | GaAs-GaInP-GaAs |
| 1st Author's Name | Masao TABUCHI |
| 1st Author's Affiliation | Venture Business Laboratory, Nagoya University() |
| 2nd Author's Name | Shin'ichi HISADOME |
| 2nd Author's Affiliation | Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Ryo OGA |
| 3rd Author's Affiliation | Graduate School of Engineering, Nagoya University |
| 4th Author's Name | Atsushi KOIZUMI |
| 4th Author's Affiliation | Graduate School of Engineering, Nagoya University |
| 5th Author's Name | Yasufumi FUJIWARA |
| 5th Author's Affiliation | Graduate School of Engineering, Nagoya University |
| 6th Author's Name | Yoshikazu TAKEDA |
| 6th Author's Affiliation | Venture Business Laboratory, Nagoya University:Graduate School of Engineering, Nagoya University |
| Date | 2003/7/25 |
| Paper # | CPM2003-63 |
| Volume (vol) | vol.103 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |