| Presentation | 2003/7/25 Evaluation of Si(001)-c(4×4) structure formed using MMSi by STM Masayuki HARASHIMA, Kanji YASUI, Tadashi AKAHANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | At the initial stage of 3C-SiC growth on Si(001) using organosilicon compounds such as monomethylsilane and dimethylsilane, the c(4x4) was formed before the nucleation of SiC islands. By the observation on the c(4x4) formed surface by scanning tunneling microscopy (STM), it was found that both c(4x4) domains and (2x1) domains coexisted. From the estimation of the lattice constant for these structures by lineprofile measurement, it was confirmed that the c(4x4) domain was contracted and to be preferential site for SiC nucleation. The STM observation of the c(4x4) also revealed that the c(4x4) domain consisted of α-cell and β-cell similar to the results reported so far. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon carbaide / monomethylsilane / c(4x4) structure / STM |
| Paper # | CPM2003-62 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2003/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of Si(001)-c(4×4) structure formed using MMSi by STM |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbaide |
| Keyword(2) | monomethylsilane |
| Keyword(3) | c(4x4) structure |
| Keyword(4) | STM |
| 1st Author's Name | Masayuki HARASHIMA |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Kanji YASUI |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Tadashi AKAHANE |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 2003/7/25 |
| Paper # | CPM2003-62 |
| Volume (vol) | vol.103 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |