| Presentation | 2002/5/17 C-doped GaAsSb grown by MOCVD with CBr_4 Yasuhiro ODA, Noriyuki WATANABE, Takashi KOBAYASHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated influence of partial pressure of CBr_4 on growth of GaAsSb by MOCVD. Because of etching effect by CBr_4, growth rate of GaAsSb decreased as partial pressure of CBr_4 increased. Additionally, Sb content in GaAsSb also decreased. These phenomena are caused by difference between etching rate of Ga-As and Ga-Sb in GaAsSb. Next, we attempted to explain increase in hall concentration after annealing in C-doped GaAsSb. Carbon acceptors in GaAsSb may combine with hydrogens, partially, and de-active in MOCVD growth. These C-H combinations are cut by thermal energy, the carbon acceptors become re-active. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / GaAsSb / CBr_4 / C-doped / acceptor passivation |
| Paper # | CPM2002-32 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2002/5/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | C-doped GaAsSb grown by MOCVD with CBr_4 |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | GaAsSb |
| Keyword(3) | CBr_4 |
| Keyword(4) | C-doped |
| Keyword(5) | acceptor passivation |
| 1st Author's Name | Yasuhiro ODA |
| 1st Author's Affiliation | NTT Photonics Laboratories Nippon Telegraph and Telephone Corporation() |
| 2nd Author's Name | Noriyuki WATANABE |
| 2nd Author's Affiliation | NTT Photonics Laboratories Nippon Telegraph and Telephone Corporation:Advanced Technology Corporation |
| 3rd Author's Name | Takashi KOBAYASHI |
| 3rd Author's Affiliation | NTT Photonics Laboratories Nippon Telegraph and Telephone Corporation |
| Date | 2002/5/17 |
| Paper # | CPM2002-32 |
| Volume (vol) | vol.102 |
| Number (no) | 79 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |