| Presentation | 2002/5/16 Growth of (10-10) GaN on Sapphire Substrates by MOCVD K. OKUNO, K. OHTSUKA, K. KUWAHARA, M. SUMIYA, Y. TAKANO, S. Fuke, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | (10-10) GaN layer can be grown on (0001) and (11-20) sapphire substrates by MOCVD using AlN buffer layer, which is formed by low-temperature Al deposition followed by temperature rise to 1040℃ and nitridation process. [0001] direction of (10-10)GaN coincided with that of sapphire substrate. However, the deposition condition for (10-10) GaN growth is limited and (10-10)GaN layer with best crystallinity was obtained by the following process: Al deposition with a thickness of 20nm at 510℃ temperature rise to 1040℃ for 10min and nitridation at 1040℃ for 3 min. Further more, the crystallinity and the surface flatness of (10-10)GaN layer were improved by inserting high-temperature AlN buffer layer on nitrided Al layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / (10-10)GaN / AlN buffer layer / Sapphire substrate |
| Paper # | CPM2002-17 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2002/5/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of (10-10) GaN on Sapphire Substrates by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | (10-10)GaN |
| Keyword(3) | AlN buffer layer |
| Keyword(4) | Sapphire substrate |
| 1st Author's Name | K. OKUNO |
| 1st Author's Affiliation | Faculty of Engineering, Shizuoka University() |
| 2nd Author's Name | K. OHTSUKA |
| 2nd Author's Affiliation | R&D Division, Sanken Electric Co. Ltd. |
| 3rd Author's Name | K. KUWAHARA |
| 3rd Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 4th Author's Name | M. SUMIYA |
| 4th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 5th Author's Name | Y. TAKANO |
| 5th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 6th Author's Name | S. Fuke |
| 6th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| Date | 2002/5/16 |
| Paper # | CPM2002-17 |
| Volume (vol) | vol.102 |
| Number (no) | 78 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |