| Presentation | 2002/11/6 Evaluation of Si c(4×4) structure formed using MMSi, DMSi Masayuki HARASHIMA, Yuzuru NARITA, Kanji YASUI, Tadashi AKAHANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Growth of cubic-silicon carbide (3C-SiC) on Si(001)-2×1 surface was investigated using organosilicon compounds such as monomethylsilane (MMSi) and dimethylsilane (DMSi). From in-situ observation of the initial stage of SiC growth by reflection high-energy electron diffraction (RHEED), it was found that Si c(4×4) structure was formed before the nucleation of SiC islands. Using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), Si c(4×4) structure surface and the surface after SiC nucleation were measured. Si c(4×4) structure was found to be formed by Si_1-xCx alloy layer, and the layer thickness was estimated to be 0.3 nm. SiC islands appeared along <010> direction of Si substrate reflecting the periodicity of Si c(4×4) structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon carbide / monomrthylsilan / dimethylsilane / Si c(4×4) structure / RHEED / XPS / AFM |
| Paper # | CPM2002-125 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2002/11/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of Si c(4×4) structure formed using MMSi, DMSi |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | monomrthylsilan |
| Keyword(3) | dimethylsilane |
| Keyword(4) | Si c(4×4) structure |
| Keyword(5) | RHEED |
| Keyword(6) | XPS |
| Keyword(7) | AFM |
| 1st Author's Name | Masayuki HARASHIMA |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Yuzuru NARITA |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Kanji YASUI |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 4th Author's Name | Tadashi AKAHANE |
| 4th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 2002/11/6 |
| Paper # | CPM2002-125 |
| Volume (vol) | vol.102 |
| Number (no) | 434 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |