| Presentation | 2002/11/6 Application of Ta_2O_5 based composites as a gate dielectric K. M. A. Salam, Hisashi Fukuda, Shigeru Nomura, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ta_2O_5-based composite thin films formed by metalorganic decomposition (MOD) and investigated with respect to their dielectric properties. The dielectric and insulating properties of composite (1-x)Ta_2O_5-xTiO_2 and (1-x)Ta_2O_5-xWO_3 thin films are found to be improved compared to that of pure Ta_2O_5 thin films. In particular, thin films with x=0.08 composition of additive TiO_2 or WO_3 to Ta_2O_5 exhibited superior dielectric and insulating properties. The maximum dielectric constant and charge storage density of composite films are about 20 and 53.6 fC/4μm^2 respectively. The temperature coefficient of dielectric constant of composite films dramatically decreases, from 65 ppm/℃ for pure Ta_2O_5 to less than 11 ppm/℃. The leakage current density of composite films is lower than 1 × 10^-9 A/cm^2 up to an applied electric field of 3 MV/cm. The dominant conduction is Poole-Frenkel conduction in the films through the measurement temperature dependence of I-V characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thin films / insulating materials / metal-insulator-semiconductor (MIS) structures |
| Paper # | CPM2002-120 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2002/11/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of Ta_2O_5 based composites as a gate dielectric |
| Sub Title (in English) | |
| Keyword(1) | Thin films |
| Keyword(2) | insulating materials |
| Keyword(3) | metal-insulator-semiconductor (MIS) structures |
| 1st Author's Name | K. M. A. Salam |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology() |
| 2nd Author's Name | Hisashi Fukuda |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
| 3rd Author's Name | Shigeru Nomura |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology |
| Date | 2002/11/6 |
| Paper # | CPM2002-120 |
| Volume (vol) | vol.102 |
| Number (no) | 434 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |