Presentation 2002/11/6
Composition Control of CuInS_2 Thin Films Prepared by the Reactive Sputtering Method Using CS_2 Gas
Shinobu KERA, Satoshi KOBAYASHI, Nozomu TUBOI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) CuInS_2 thin films were prepared by the reactive sputtering method using CS_2 gas under the various the target area ratio and CS_2 gas partial pressure were investigated. It was found that the [Cu]/[In] composition ratio proportionaly increased, and the [S]/([Cu]+[In]) composition ratio slightly decreased with increasing Cu/In target area ratio. The strong CuInS_2(112) X-ray intensity was found in films deposited under high CS_2 gas partial pressure of 0.20×10^-3Torr and 0.25×10^-3Torr. The transmission rised at shorter wavelength than the bulk absorption edge of 810nm. All films were p-type and their resistivity decresed with increasing Cu/In target area ratio.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) reactive sputtering / CuInS_2 / thin films
Paper # CPM2002-113
Date of Issue

Conference Information
Committee CPM
Conference Date 2002/11/6(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Composition Control of CuInS_2 Thin Films Prepared by the Reactive Sputtering Method Using CS_2 Gas
Sub Title (in English)
Keyword(1) reactive sputtering
Keyword(2) CuInS_2
Keyword(3) thin films
1st Author's Name Shinobu KERA
1st Author's Affiliation Graduate School of Science and Technology, Nigata University()
2nd Author's Name Satoshi KOBAYASHI
2nd Author's Affiliation Faculty of Engineering, Nigata University
3rd Author's Name Nozomu TUBOI
3rd Author's Affiliation Faculty of Engineering, Nigata University
Date 2002/11/6
Paper # CPM2002-113
Volume (vol) vol.102
Number (no) 434
Page pp.pp.-
#Pages 5
Date of Issue