Presentation 2002/10/4
Application of an electrochemical method with aqueous KOH solutions for fabrication of 6H-SiC patterned structures
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI,
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Abstract(in English) Commercially available n-type 6H-SiC bulk crystals were etched by an electrochemical method using aqueous KOH solutions. Etching conditions, such as KOH concentration, temperature and current density were varied. Etched surface morphologies and etching rates depended on the etching conditions. In order to fabricate patterned structures on 6H-SiC surfaces, we used Ni metal as a mask material using an etching condition which is able to get the flattest etched surface with a reasonable etching rate. As a result, although there are some problems, the patterned structure was obtained.
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Keyword(in English) 6H-SiC / electrochemical method / KOH / etching / patterned structure
Paper # CPM2002-111
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Committee CPM
Conference Date 2002/10/4(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Application of an electrochemical method with aqueous KOH solutions for fabrication of 6H-SiC patterned structures
Sub Title (in English)
Keyword(1) 6H-SiC
Keyword(2) electrochemical method
Keyword(3) KOH
Keyword(4) etching
Keyword(5) patterned structure
1st Author's Name Masashi KATO
1st Author's Affiliation Dept. of Electrical and Computer Eng., Nagoya Inst. of Tech()
2nd Author's Name Masaya ICHIMURA
2nd Author's Affiliation Dept. of Electrical and Computer Eng., Nagoya Inst. of Tech
3rd Author's Name Eisuke ARAI
3rd Author's Affiliation Dept. of Electrical and Computer Eng., Nagoya Inst. of Tech
Date 2002/10/4
Paper # CPM2002-111
Volume (vol) vol.102
Number (no) 366
Page pp.pp.-
#Pages 5
Date of Issue