| Presentation | 2002/10/4 Suppression of Drain Conductance in InP-based HEMTs by Eliminating Hole Accumulation Tomoyuki ARAI, Ken SAWADA, Naoya OKAMOTO, Kozo MAKIYAMA, Tsuyoshi TAKAHASHI, Naoki HARA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose new planar type InP-based HEMTs, which significantly suppress frequency dispersion of drain conductance(g_d)and kink phenomena. These phenomena appear to be caused by hole accumulation at the extrinsic source due to impact ionization in the channel. The planar structure eliminated hole barrier at the carrier-supply layer/channel interface by adopting alloyed ohmic contacts to suppress hole accumulation. Therefore, the planar structure suppressed g_d frequency dispersion to 25 %, and kink phenomena to 50 % compared with conventional structure HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP / HEMT / drain conductance / frequency dispersion / kink / hole barrier |
| Paper # | CPM2002-108 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2002/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression of Drain Conductance in InP-based HEMTs by Eliminating Hole Accumulation |
| Sub Title (in English) | |
| Keyword(1) | InP |
| Keyword(2) | HEMT |
| Keyword(3) | drain conductance |
| Keyword(4) | frequency dispersion |
| Keyword(5) | kink |
| Keyword(6) | hole barrier |
| 1st Author's Name | Tomoyuki ARAI |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Ken SAWADA |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Naoya OKAMOTO |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Kozo MAKIYAMA |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Tsuyoshi TAKAHASHI |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Naoki HARA |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2002/10/4 |
| Paper # | CPM2002-108 |
| Volume (vol) | vol.102 |
| Number (no) | 366 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |