Presentation 2003/10/10
Low-frequency noise properties of NbN, Nb and Bi-2212-based tunnel junctions
H. Ishida, A. Saito, K. Okanoue, A. Kawakami, Z. Wang, A. Irie, G. Oya, K. Hamasaki,
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Abstract(in English) 1/f noise properties in Nb, NbN-based tunnel junctions and Bi-2212 intrinsic tunnel junctions have been investigated. We found that Nb and NbN-based junctions exhibit η(1/f noise parameter) vs. A(E) (Andreev reflection probability) curve scales approximately as log η &vprop: aA(E)^<-1> / exp(bA(E)^<-1> -1). We also observed excess 1/fnoise in sub-gap voltage region for all type junctions. We suggest that the excess 1/fnoise arises from the Andreev reflection phenomena.
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Keyword(in English) Nb, NbN tunnel junction / Bi-2212 intrinsic junction / 1/f noise / Andreev reflection
Paper # SCE2003-21
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Committee SCE
Conference Date 2003/10/10(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-frequency noise properties of NbN, Nb and Bi-2212-based tunnel junctions
Sub Title (in English)
Keyword(1) Nb, NbN tunnel junction
Keyword(2) Bi-2212 intrinsic junction
Keyword(3) 1/f noise
Keyword(4) Andreev reflection
1st Author's Name H. Ishida
1st Author's Affiliation Department of Engineering, Nagaoka University of Technology()
2nd Author's Name A. Saito
2nd Author's Affiliation Department of Engineering, Yamagata University
3rd Author's Name K. Okanoue
3rd Author's Affiliation Department of Engineering, Nagaoka University of Technology
4th Author's Name A. Kawakami
4th Author's Affiliation KARC Communications Research Laboratory
5th Author's Name Z. Wang
5th Author's Affiliation KARC Communications Research Laboratory
6th Author's Name A. Irie
6th Author's Affiliation Department of Engineering, Utsunomiya University
7th Author's Name G. Oya
7th Author's Affiliation Department of Engineering, Utsunomiya University
8th Author's Name K. Hamasaki
8th Author's Affiliation Department of Engineering, Nagaoka University of Technology
Date 2003/10/10
Paper # SCE2003-21
Volume (vol) vol.103
Number (no) 367
Page pp.pp.-
#Pages 6
Date of Issue