Presentation 2003/7/11
Modification of superconductivity for YBCO films by ion bombardment process
Mizushi MATSUDA, Atsushi TAKAHASHI, Shinya KURIKI,
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Abstract(in English) We developed techniques to control superconductivity of YBCO films in the depth directions. In this method, a nonsuperconducting layer was made at a surface of YBCO by the ion irradiatio with a low acceleration voltage of focused ion beam (FIB). A typical dose density of 20-40 kV Si^<++> FIB was 10^<13>-10^<14> ions/cm^2. Thickness of a damaged layer by a ion irradiation could be evaluated by ion bombardment enhanced etching process using Br solution diluted by ethanol because such a region formed by the ion bombardment is selectively dissolved and removed away almost completely in the etchant. Depth of the damaged layer depends on the aceleration voltage of FIB. We also compared the critical current values of virgin YBCO bridges with those of line-dosed bridges to evaluate the thickness of nonsuperconducting layer formed. It was found no degradation of superconducting properties was caused at the films left under the penetration depth of irradiations. The irradiation through a buffer layer of Au upon an YBCO film was found to be effective to decrease the thickness of nonsuperconductive YBCO layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Focused in beam / YBCO films / ion irradiation / damaged layer / Au buffer / control of superconductivity
Paper # SCE2003-16
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Committee SCE
Conference Date 2003/7/11(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Modification of superconductivity for YBCO films by ion bombardment process
Sub Title (in English)
Keyword(1) Focused in beam
Keyword(2) YBCO films
Keyword(3) ion irradiation
Keyword(4) damaged layer
Keyword(5) Au buffer
Keyword(6) control of superconductivity
1st Author's Name Mizushi MATSUDA
1st Author's Affiliation Muroran Institute of Technology()
2nd Author's Name Atsushi TAKAHASHI
2nd Author's Affiliation Research Institute for Electronic Science, Hokkaido Univ.
3rd Author's Name Shinya KURIKI
3rd Author's Affiliation Research Institute for Electronic Science, Hokkaido Univ.
Date 2003/7/11
Paper # SCE2003-16
Volume (vol) vol.103
Number (no) 211
Page pp.pp.-
#Pages 4
Date of Issue