Presentation 2003/1/22
SQUID gates using all YBaCuO trilayer junctions
Tsutomu NAKAJIMA, Hiroshi SATO, Eiji FUJIMOTO, Kohji HOHKAWA, Hiroshi AKOH,
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Abstract(in English) We report a demonstration of high-temperature superconducting (HTS) superconducting quantum interface devices (SQUID) gates using all YBa_2Cu_3O_<7-d> (YBaCuO) trilayer junctions. Two-junction SQUID gates, which were basic gates of the SFQ logic gates, were fabricated to study basic characteristics. The devices consist of all c-axis oriented YBaCuO/PrBaCuO/YBaCuO trilayer junctions, epitaxial CeO_2 insulator layers, and YBaCuO wiring layers. The fabricated gates exhibited the clear threshold characteristics at temperatures ranging from 4.2 K to 70 K. The estimated sheet inductance was in good agreement with a design value. This indicates that the SQUID gate can be used as a circuit element at below 70 K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) All YBaCuO trilayer junctions / SQUID gate / Threshold characteristic / Inductance
Paper # SCE2002-37
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Conference Information
Committee SCE
Conference Date 2003/1/22(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) SQUID gates using all YBaCuO trilayer junctions
Sub Title (in English)
Keyword(1) All YBaCuO trilayer junctions
Keyword(2) SQUID gate
Keyword(3) Threshold characteristic
Keyword(4) Inductance
1st Author's Name Tsutomu NAKAJIMA
1st Author's Affiliation Kanagawa Institute of Technology()
2nd Author's Name Hiroshi SATO
2nd Author's Affiliation Correlated Electron Research Center(CERC),National Institute of Advanced Industrial Science and Technology(AIST)
3rd Author's Name Eiji FUJIMOTO
3rd Author's Affiliation Correlated Electron Research Center(CERC),National Institute of Advanced Industrial Science and Technology(AIST)
4th Author's Name Kohji HOHKAWA
4th Author's Affiliation Kanagawa Institute of Technology
5th Author's Name Hiroshi AKOH
5th Author's Affiliation Correlated Electron Research Center(CERC),National Institute of Advanced Industrial Science and Technology(AIST)
Date 2003/1/22
Paper # SCE2002-37
Volume (vol) vol.102
Number (no) 612
Page pp.pp.-
#Pages 4
Date of Issue