Presentation | 2003/1/22 SQUID gates using all YBaCuO trilayer junctions Tsutomu NAKAJIMA, Hiroshi SATO, Eiji FUJIMOTO, Kohji HOHKAWA, Hiroshi AKOH, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report a demonstration of high-temperature superconducting (HTS) superconducting quantum interface devices (SQUID) gates using all YBa_2Cu_3O_<7-d> (YBaCuO) trilayer junctions. Two-junction SQUID gates, which were basic gates of the SFQ logic gates, were fabricated to study basic characteristics. The devices consist of all c-axis oriented YBaCuO/PrBaCuO/YBaCuO trilayer junctions, epitaxial CeO_2 insulator layers, and YBaCuO wiring layers. The fabricated gates exhibited the clear threshold characteristics at temperatures ranging from 4.2 K to 70 K. The estimated sheet inductance was in good agreement with a design value. This indicates that the SQUID gate can be used as a circuit element at below 70 K. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | All YBaCuO trilayer junctions / SQUID gate / Threshold characteristic / Inductance |
Paper # | SCE2002-37 |
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Conference Information | |
Committee | SCE |
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Conference Date | 2003/1/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | SQUID gates using all YBaCuO trilayer junctions |
Sub Title (in English) | |
Keyword(1) | All YBaCuO trilayer junctions |
Keyword(2) | SQUID gate |
Keyword(3) | Threshold characteristic |
Keyword(4) | Inductance |
1st Author's Name | Tsutomu NAKAJIMA |
1st Author's Affiliation | Kanagawa Institute of Technology() |
2nd Author's Name | Hiroshi SATO |
2nd Author's Affiliation | Correlated Electron Research Center(CERC),National Institute of Advanced Industrial Science and Technology(AIST) |
3rd Author's Name | Eiji FUJIMOTO |
3rd Author's Affiliation | Correlated Electron Research Center(CERC),National Institute of Advanced Industrial Science and Technology(AIST) |
4th Author's Name | Kohji HOHKAWA |
4th Author's Affiliation | Kanagawa Institute of Technology |
5th Author's Name | Hiroshi AKOH |
5th Author's Affiliation | Correlated Electron Research Center(CERC),National Institute of Advanced Industrial Science and Technology(AIST) |
Date | 2003/1/22 |
Paper # | SCE2002-37 |
Volume (vol) | vol.102 |
Number (no) | 612 |
Page | pp.pp.- |
#Pages | 4 |
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