in a Smith chart is caused by this inherent ambivalent characteristic of the output impedance. If gate-drain resistance is increased, then from our derived equations, the kink point moves to a new intercept point with a larger resistance (r) and a smaller conductance (g) at a smaller frequency, which makes the kink effect more prominent. The present analyses enable RF engineers to understand the behaviors of S-parameters more deeply, and hence are helpful for them to create a fully scalable CMOS model for SOC applications." />
Presentation | 2002/11/28 An Analysis of the Kink Effect of Scattering Parameter S_<22> in RF Power MOSFETs for System-On-Chip (SOC) Applications Yo-Sheng Lin, Hsiao-Bin Liang, Shey-Shi Lu, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper, the kink effect in scattering parameter S_<22> of RF power MOSFETs for System-On-Chip (SOC) applications is explained quantitatively for the first time. The calculated S_<22> of RF power MOSFETs conforms well to the experimental data. In addition, our results show that for RF power MOSFETs, the output impedance can be represented by a "shifted" series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. The appearance of the kink point of S_<22> in a Smith chart is caused by this inherent ambivalent characteristic of the output impedance. If gate-drain resistance is increased, then from our derived equations, the kink point moves to a new intercept point with a larger resistance (r) and a smaller conductance (g) at a smaller frequency, which makes the kink effect more prominent. The present analyses enable RF engineers to understand the behaviors of S-parameters more deeply, and hence are helpful for them to create a fully scalable CMOS model for SOC applications. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | RF Power MOS / Gate-Drain Resistance / Kink Effect / S_<22> |
Paper # | SCE2002-31-a |
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Conference Information | |
Committee | SCE |
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Conference Date | 2002/11/28(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | An Analysis of the Kink Effect of Scattering Parameter S_<22> in RF Power MOSFETs for System-On-Chip (SOC) Applications |
Sub Title (in English) | |
Keyword(1) | RF Power MOS |
Keyword(2) | Gate-Drain Resistance |
Keyword(3) | Kink Effect |
Keyword(4) | S_<22> |
1st Author's Name | Yo-Sheng Lin |
1st Author's Affiliation | Department of Electrical Engineering,National Chi-Nan University() |
2nd Author's Name | Hsiao-Bin Liang |
2nd Author's Affiliation | Department of Electrical Engineering,National Chi-Nan University |
3rd Author's Name | Shey-Shi Lu |
3rd Author's Affiliation | Department of Electrical Engineering,National Taiwan University |
Date | 2002/11/28 |
Paper # | SCE2002-31-a |
Volume (vol) | vol.102 |
Number (no) | 480 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |