in a Smith chart is caused by this inherent ambivalent characteristic of the output impedance. If gate-drain resistance is increased, then from our derived equations, the kink point moves to a new intercept point with a larger resistance (r) and a smaller conductance (g) at a smaller frequency, which makes the kink effect more prominent. The present analyses enable RF engineers to understand the behaviors of S-parameters more deeply, and hence are helpful for them to create a fully scalable CMOS model for SOC applications." />

Presentation 2002/11/28
An Analysis of the Kink Effect of Scattering Parameter S_<22> in RF Power MOSFETs for System-On-Chip (SOC) Applications
Yo-Sheng Lin, Hsiao-Bin Liang, Shey-Shi Lu,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, the kink effect in scattering parameter S_<22> of RF power MOSFETs for System-On-Chip (SOC) applications is explained quantitatively for the first time. The calculated S_<22> of RF power MOSFETs conforms well to the experimental data. In addition, our results show that for RF power MOSFETs, the output impedance can be represented by a "shifted" series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. The appearance of the kink point of S_<22> in a Smith chart is caused by this inherent ambivalent characteristic of the output impedance. If gate-drain resistance is increased, then from our derived equations, the kink point moves to a new intercept point with a larger resistance (r) and a smaller conductance (g) at a smaller frequency, which makes the kink effect more prominent. The present analyses enable RF engineers to understand the behaviors of S-parameters more deeply, and hence are helpful for them to create a fully scalable CMOS model for SOC applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) RF Power MOS / Gate-Drain Resistance / Kink Effect / S_<22>
Paper # SCE2002-31-a
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Committee SCE
Conference Date 2002/11/28(1days)
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Registration To Superconductive Electronics (SCE)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) An Analysis of the Kink Effect of Scattering Parameter S_<22> in RF Power MOSFETs for System-On-Chip (SOC) Applications
Sub Title (in English)
Keyword(1) RF Power MOS
Keyword(2) Gate-Drain Resistance
Keyword(3) Kink Effect
Keyword(4) S_<22>
1st Author's Name Yo-Sheng Lin
1st Author's Affiliation Department of Electrical Engineering,National Chi-Nan University()
2nd Author's Name Hsiao-Bin Liang
2nd Author's Affiliation Department of Electrical Engineering,National Chi-Nan University
3rd Author's Name Shey-Shi Lu
3rd Author's Affiliation Department of Electrical Engineering,National Taiwan University
Date 2002/11/28
Paper # SCE2002-31-a
Volume (vol) vol.102
Number (no) 480
Page pp.pp.-
#Pages 4
Date of Issue