Presentation 2003/12/12
Temperature characteristics of stress-induced migration
Minoru AOYAGI,
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Abstract(in English) Stress-induced migration phenomenon causes voids and disconnections in metal interconnections in semiconductor devices during high-temperature storage. This phenomenon is one of the problems related to the reliability of interconnections. The purpose of this work is to theoretically clarify the temperature characteristic of stress-induced migration. First, we present the theoretical model for the vacancy behavior due to stress-induced migration. Next, the theoretical model is applied to void formation and disconnection to confirm its validity. Finally, the results of the theoretical analysis are compared with the experimental results of high-temperature storage. We find that the temperature characteristics of void formation change depending on the void interval, and those of disconnection change depending on the void interval and the void radius. The presented model can qualitatively explain the temperature characteristics of the interconnection lifetime.
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Keyword(in English) Stress-Induced Migration / Stress / diffusion / Reliability / Semiconductor
Paper # R2003-53,SSS2003-28(2003-12)
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Committee SSS
Conference Date 2003/12/12(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Temperature characteristics of stress-induced migration
Sub Title (in English)
Keyword(1) Stress-Induced Migration
Keyword(2) Stress
Keyword(3) diffusion
Keyword(4) Reliability
Keyword(5) Semiconductor
1st Author's Name Minoru AOYAGI
1st Author's Affiliation Department of Electrical & Electronics Engineering, Nippon Institute of Technology()
Date 2003/12/12
Paper # R2003-53,SSS2003-28(2003-12)
Volume (vol) vol.103
Number (no) 530
Page pp.pp.-
#Pages 6
Date of Issue