| Presentation | 2003/12/12 Temperature characteristics of stress-induced migration Minoru AOYAGI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Stress-induced migration phenomenon causes voids and disconnections in metal interconnections in semiconductor devices during high-temperature storage. This phenomenon is one of the problems related to the reliability of interconnections. The purpose of this work is to theoretically clarify the temperature characteristic of stress-induced migration. First, we present the theoretical model for the vacancy behavior due to stress-induced migration. Next, the theoretical model is applied to void formation and disconnection to confirm its validity. Finally, the results of the theoretical analysis are compared with the experimental results of high-temperature storage. We find that the temperature characteristics of void formation change depending on the void interval, and those of disconnection change depending on the void interval and the void radius. The presented model can qualitatively explain the temperature characteristics of the interconnection lifetime. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Stress-Induced Migration / Stress / diffusion / Reliability / Semiconductor |
| Paper # | R2003-53,SSS2003-28(2003-12) |
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| Conference Information | |
| Committee | SSS |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Safety (SSS) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature characteristics of stress-induced migration |
| Sub Title (in English) | |
| Keyword(1) | Stress-Induced Migration |
| Keyword(2) | Stress |
| Keyword(3) | diffusion |
| Keyword(4) | Reliability |
| Keyword(5) | Semiconductor |
| 1st Author's Name | Minoru AOYAGI |
| 1st Author's Affiliation | Department of Electrical & Electronics Engineering, Nippon Institute of Technology() |
| Date | 2003/12/12 |
| Paper # | R2003-53,SSS2003-28(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 530 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |