Presentation 2004/1/23
Carrier concentration dependency of intersubband absorption coefficient of GaN/AlN superlattice
Yohei Ishii, Takayuki Morita, Satoshi Matsui, Fetter Holmstrom, Akihiko Kikuchi, Katsumi Kishino,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Intersubband transition (ISBT) in GaN/AlN super lattice system is very attractive phenomenon due to ultrafast absorption relaxation (~100fsec) and possibility of application in optical communication wavelength region. In this study, GaN/AlN superlattices were grown by RF-plasma assisted molecular beam epitaxy on (0001) sapphire substrate. By use of SiO_2 rib-waveguide structure, light polarization dependency of ISBT was observed. The ISBT absorption coefficient was systematically evaluated for wide carrier concentration range from 1x10^<18> to 3x10^<20>cm^<-3>. The free carrier absorption coefficient was also estimated by waveguide measurement.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) optical switch / nitride semiconductor / intersubband transition / ISBT absorption / free carrier absorption
Paper # PN2003-84,OFT2003-106,OPE2003-263,LQE2003-200
Date of Issue

Conference Information
Committee OFT
Conference Date 2004/1/23(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Optical Fiber Technology (OFT)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Carrier concentration dependency of intersubband absorption coefficient of GaN/AlN superlattice
Sub Title (in English)
Keyword(1) optical switch
Keyword(2) nitride semiconductor
Keyword(3) intersubband transition
Keyword(4) ISBT absorption
Keyword(5) free carrier absorption
1st Author's Name Yohei Ishii
1st Author's Affiliation Faculty of Engineering, Sophia University()
2nd Author's Name Takayuki Morita
2nd Author's Affiliation Faculty of Engineering, Sophia University
3rd Author's Name Satoshi Matsui
3rd Author's Affiliation Faculty of Engineering, Sophia University
4th Author's Name Fetter Holmstrom
4th Author's Affiliation Faculty of Engineering, Sophia University
5th Author's Name Akihiko Kikuchi
5th Author's Affiliation Faculty of Engineering, Sophia University
6th Author's Name Katsumi Kishino
6th Author's Affiliation Faculty of Engineering, Sophia University
Date 2004/1/23
Paper # PN2003-84,OFT2003-106,OPE2003-263,LQE2003-200
Volume (vol) vol.103
Number (no) 615
Page pp.pp.-
#Pages 5
Date of Issue